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NTP5426NG |
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| Part Number | NTP5426NG |
| Manufacturer | VBsemi |
| Description | NTP5426NG-VB NTP5426NG-VB Datasheet N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS RDS(on) VGS = 10 V ID Configuration 60 V 5 m 120 A Single FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization: TO-220AB D www.VBsemi.com G GDS S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise no. |
| Features |
• 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization: TO-220AB D www.VBsemi.com G GDS S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20 V Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 100 °C ID 120 90 Pulsed Drain Current IDM 350 A Continuous Source Current (Diode Conduction) IS 70a Avalanche Current IAS 50 Single Avalanche Energy (Duty Cycle 1 %) L = 0.1 mH EAS 125 mJ Maximum Power Dissipation TC = 25 °C TA = 25 °C PD 136 3b, 8.. |
| Datasheet |
 NTP5426NG Data Sheet
PDF 253.79KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NTP5426N |
ON Semiconductor |
Power MOSFET |
|
| 2 | NTP5404N |
ON Semiconductor |
Power MOSFET |
|
| 3 | NTP5411N |
ON Semiconductor |
Power MOSFET |
|
| 4 | NTP5412N |
ON Semiconductor |
Power MOSFET |
|
| 5 | NTP52N10 |
ON Semiconductor |
Power MOSFET |
|
| 6 | NTP52N10D |
ON Semiconductor |
Power MOSFET |
|
| 7 | NTP5312 |
NXP |
NFC |
|
| 8 | NTP5332 |
NXP |
NFC |
|
| 9 | NTP5860N |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 10 | NTP5860NL |
ON Semiconductor |
N-Channel Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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