NTMYS3D5N04C |
Part Number | NTMYS3D5N04C |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Description | NTMYS3D5N04C MOSFET – Power, Single, N-Channel 40 V, 3.3 mW, 102 A Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) P. |
Features |
• Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation RqJC (Note 1) TC = 25°C ID Steady TC = 100°C State TC = 25°C PD TC = 100°C 102 A 72 68 W 34 Continuous Drain Current RqJA (Notes 1, 2, 3) Po. |
Datasheet |
NTMYS3D5N04C Data Sheet
PDF 338.30KB |
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