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NP4886SR |
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| Part Number | NP4886SR |
| Manufacturer | natlinear |
| Description | Schematic diagram The NP4886 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. D1 G1 D2 G2 General Features VDS =40V,ID =8A RDS(ON)=14.6mΩ (typical) @ VGS=10V RDS(ON)=17.5mΩ (typical) @ VGS=4.5V Excellent gate charge x RDS(ON) prod. |
| Features | VDS =40V,ID =8A RDS(ON)=14.6mΩ (typical) @ VGS=10V RDS(ON)=17.5mΩ (typical) @ VGS=4.5V Excellent gate charge x RDS(ON) product(FOM) Very low on-resistance RDS(ON) 150 °C operating temperature Pb-free lead plating 100% UIS tested S1 S2 Marking and pin assignment Application 100% UIS TESTED! DC/DC Converter 100% ∆Vds TESTED! Ideal for high-frequency switching and synchronous rectification Package SOP-8 Note：XXXX is the date code , YYYY is the Quality Code Ordering Information Part Number NP4886SR-G Storage Temperature -55°C to +150°C Package SOP-8 Devices Per Re. |
| Datasheet |
 NP4886SR Data Sheet
PDF 448.19KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NP4886BD6 |
natlinear |
40V Dual N-Channel Enhancement Mode MOSFET |
|
| 2 | NP4803SR |
natlinear |
30V Dual P-Channel Enhancement Mode MOSFET |
|
| 3 | NP4822SR |
natlinear |
60V Dual N-Channel Enhancement Mode MOSFET |
|
| 4 | NP48N055CLE |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 5 | NP48N055DLE |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 6 | NP48N055ELE |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 7 | NP48N055KLE |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 8 | NP48N055MLE |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 9 | NP48N055NLE |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 10 | NP4008SR |
natlinear |
40V N-Channel Enhancement Mode MOSFET |
|
Desde 2024. D4U Semiconductor.
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