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NP4606G |
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| Part Number | NP4606G |
| Manufacturer | natlinear |
| Description | Schematic diagram The NP4606G uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. D1/D2 General Features N-channel： VDS =30V，ID =12A RDS(ON)=17mΩ (typical) @ VGS=10V RDS(ON)=25mΩ (typical) @ VGS=4.5V P-Ch. |
| Features | N-channel： VDS =30V，ID =12A RDS(ON)=17mΩ (typical) @ VGS=10V RDS(ON)=25mΩ (typical) @ VGS=4.5V P-Channel： VDS =-30V，ID =-12A RDS(ON)=28mΩ (typical) @ VGS=-10V RDS(ON)=36mΩ (typical) @ VGS=-4.5V Excellent gate charge x RDS(ON) product(FOM) Very low on-resistance RDS(ON) 150 °C operating temperature Pb-free lead plating 100% UIS tested Application N-CH P-CH Marking and pin assignment D1/D2 NP4606 XXXX YYYY S1 G1 S2 G2 DC/DC Converter Ideal for high-frequency switching and synchronous rectification XXXX—Wafer Information YYYY—Quality Code Ordering Information Part Number . |
| Datasheet |
 NP4606G Data Sheet
PDF 450.07KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NP4614QR |
natlinear |
N And P-Channel Enhancement Mode MOSFET |
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| 2 | NP4008SR |
natlinear |
40V N-Channel Enhancement Mode MOSFET |
|
| 3 | NP40N055CLE |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 4 | NP40N055DLE |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 5 | NP40N055ELE |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 6 | NP40N055KLE |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 7 | NP40N055MLE |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 8 | NP40N055NLE |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 9 | NP40N10PDF |
Renesas |
N-channel Power MOS FET |
|
| 10 | NP40N10VDF |
Renesas |
N-channel Power MOS FET |
|
Desde 2024. D4U Semiconductor.
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