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NP30N06QDK |
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| Part Number | NP30N06QDK |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | NP29N06QDK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on)1 = 14 m MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 21 m MAX. (VGS = 4.5 V, ID = 7.5 A) Low Ciss: Ciss = 1500 pF TYP. (VDS = 25 V) Designed for automotive application and AEC-Q101 qualified Smal. |
| Features |
Super low on-state resistance RDS(on)1 = 14 m MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 21 m MAX. (VGS = 4.5 V, ID = 7.5 A) Low Ciss: Ciss = 1500 pF TYP. (VDS = 25 V) Designed for automotive application and AEC-Q101 qualified Small size package 8-pin HSON dual Outline Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Ordering Information Part No. Lead. |
| Datasheet |
 NP30N06QDK Data Sheet
PDF 479.78KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NP30N04QUK |
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| 2 | NP3007DR |
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| 3 | NP3065D6 |
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| 4 | NP3095G |
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| 5 | NP32N055HDE |
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| 6 | NP32N055HHE |
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| 7 | NP32N055HLE |
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| 8 | NP32N055IDE |
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| 9 | NP32N055IHE |
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| 10 | NP32N055ILE |
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Desde 2024. D4U Semiconductor.
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