NJW21194G Datasheet. existencias, precio

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NJW21194G Silicon Power Transistors


NJW21194G
Part Number NJW21194G
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NJW21194G
Part Number NJW21194G
Manufacturer INCHANGE
Title NPN Transistor
Description ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ·For audio amplifier applications ABSOLUTE MAXIMUM R.
Features CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC=8A; IB= 0.8A VCE(sat)-2 Collector-Emitter Saturation Voltage IC=16A; IB= 3.2A VBE(on) Base-Emitter On Voltage IC=8A; VCE= 5V ICEO Collector Cutoff Curren.

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