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NIV6150 |
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| Part Number | NIV6150 |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | Pin No. Pin Name Description 1, 2 VCC Positive input voltage to the device. (Low ESR capacitor of minimum 4.7 mF from VCC to GND is required) 3 GND Negative input voltage to the device. This is used as the internal reference for the IC. 4 IMON This pin can be used to monitor the output current by using an external pull−down resistor and de−coupling. |
| Features |
• 200 mW Max RDS(on) • Integrated Reverse Current Protection • Adjustable Output Current Limit Protection with Thermal Shutdown • IEC61000−4−2 Level 4 ESD Protection for Vbus up to ±7 kV • Fast Response Overvoltage Clamp Circuit with Selectable Level • Internal Undervoltage Lockout Circuit • Digital Enable with Separate FLAG for Fault Identification • Integrated Current Monitoring • Both Latching and Auto−Retry Options Available • NIV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable • These Devices are Pb−Fr. |
| Datasheet |
 NIV6150 Data Sheet
PDF 290.97KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NIV6350 |
ON Semiconductor |
+5 Volt Electronic eFuse |
|
| 2 | NIV1161 |
ON Semiconductor |
ESD Protection |
|
| 3 | NIV1241 |
ON Semiconductor |
ESD Protection |
|
| 4 | NIV2161 |
ON Semiconductor |
ESD Protection |
|
| 5 | NIV3071 |
ON Semiconductor |
4-Channel eFuse |
|
| 6 | NI-100M-6900 |
TAITIEN |
100MHz Ultra Low Noise/Low G-Sensitivity OCXO |
|
| 7 | NI-100M-6901 |
TAITIEN |
100MHz Ultra Low Noise/Low G-Sensitivity OCXO |
|
| 8 | NI-100M-6910 |
TAITIEN |
100MHz Ultra Low Noise/Low G-Sensitivity OCXO |
|
| 9 | NI-100M-6911 |
TAITIEN |
100MHz Ultra Low Noise/Low G-Sensitivity OCXO |
|
| 10 | NI-100M-6920 |
TAITIEN |
100MHz Ultra Low Noise/Low G-Sensitivity OCXO |
|
Desde 2024. D4U Semiconductor.
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