| Part Number | NDS9956A |
| Manufacturer | Fairchild |
| Title | |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pul... |
| Features |
3.7A, 30V. RDS(ON) = 0.08Ω @ VGS = 10V High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package.
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5
4 3 2
1
6
7 8
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
T A= 25°C unless otherwise noted
NDS9956A 30 ± 20
(Note 1a)
Units V V A
± 3.7 ± 15 2
Power Dissipation for Dual Operation Power Dissipation for Si... |
| Document |
 NDS9956A datasheet pdf (341.13KB)
|
| Distributor |
Bisco Industries All other distributors |
| Stock | 40 In Stock |
| Price | No price available |
| BuyNow |
 Buy Now (Manufacturer a MISCELLANEOUS NDS9956A) |
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