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NDB7052L N-Channel MOSFET

NDB7052L

NDB7052L
NDB7052L NDB7052L
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Part Number NDB7052L
Manufacturer Fairchild
Description These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.
Features 75 A, 50 V. RDS(ON) = 0.010 Ω @ VGS= 5 V RDS(ON) = 0.0075 Ω @ VGS= 10 V. Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2.0V. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. ________________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VDGR VGSS ID Paramet.
Datasheet Datasheet NDB7052L Data Sheet
PDF 54.84KB
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