| Part Number | NDB6060 |
| Manufacturer | Fairchild |
| Title | MOSFET Transistor, N-Channel, TO-263AB |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high ener... |
| Features |
48A, 60V. RDS(ON) = 0.025Ω @ VGS=10V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
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D
G
S
Absolute Maximum Ratings
Symbol VDSS VDGR VGSS ID Parameter Drain-Source Voltage
T C = 25°C unless otherwise ... |
| Document |
 NDB6060 datasheet pdf (360.67KB)
|
| Distributor |
Quest Components All other distributors |
| Stock | 359 In Stock |
| Price | 215 units: 1.295 USD 98 units: 1.4 USD 1 units: 2.8 USD
|
| BuyNow |
 Buy Now (Manufacturer a National Semiconductor Corporation NDB6060) |
| Part Number | NDB6060L |
| Manufacturer | ON Semiconductor |
| Title | N-Channel FET |
| Description | Features 48A, 60V. RDS(ON) = 0.025Ω @ VGS = 5V. These logic level N-Channel enhancement mode power field effect transistors are produced using O. |
| Features |
48A, 60V. RDS(ON) = 0.025Ω @ VGS = 5V.
These logic level N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, prov. |
| Document | NDB6060L datasheet pdf |
| Part Number | NDB6060L |
| Manufacturer | Inchange Semiconductor |
| Title | N-Channel MOSFET Transistor |
| Description | ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Sou. |
| Features |
·Drain Current : ID= 48A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 20mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power swi. |
| Document | NDB6060L datasheet pdf |
| Part Number | NDB6060L |
| Manufacturer | Fairchild |
| Title | N-Channel MOSFET |
| Description | These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS te. |
| Features |
48A, 60V. RDS(ON) = 0.025Ω @ VGS = 5V. Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2.0V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppresso. |
| Document | NDB6060L datasheet pdf |
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