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NDB6060

Fairchild
NDB6060
Part Number NDB6060
Manufacturer Fairchild
Title N-Channel MOSFET
Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. Th...
Features 48A, 60V. RDS(ON) = 0.025Ω @ VGS=10V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low...

Datasheet NDB6060 pdf datasheet - 360.67KB



NDB6060L

ON Semiconductor
NDB6060L
Part Number NDB6060L
Manufacturer ON Semiconductor
Title N-Channel FET
Description Features 48A, 60V. RDS(ON) = 0.025Ω @ VGS = 5V. These logic level N-Channel enhancement mode power field effect transistors are produced using O.
Features 48A, 60V. RDS(ON) = 0.025Ω @ VGS = 5V. These logic level N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, prov.

Datasheet NDB6060L pdf datasheet




NDB6060L

Inchange Semiconductor
NDB6060L
Part Number NDB6060L
Manufacturer Inchange Semiconductor
Title N-Channel MOSFET Transistor
Description ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Sou.
Features
·Drain Current : ID= 48A@ TC=25℃
·Drain Source Voltage : VDSS= 60V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 20mΩ(Max) @ VGS= 10V
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
·motor drive, DC-DC converter, power swi.

Datasheet NDB6060L pdf datasheet




NDB6060L

Fairchild
NDB6060L
Part Number NDB6060L
Manufacturer Fairchild
Title N-Channel MOSFET
Description These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS te.
Features 48A, 60V. RDS(ON) = 0.025Ω @ VGS = 5V. Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2.0V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppresso.

Datasheet NDB6060L pdf datasheet





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