NCE01H16 |
Part Number | NCE01H16 |
Manufacturer | NCE Power Semiconductor |
Description | The NCE01H16 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Pb Free Product NCE01H16 General Features ● VDS =100V,ID =160A RDS(ON) <5.0mΩ @ VGS=10V (Typ:3.8mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current . |
Features |
● VDS =100V,ID =160A RDS(ON) <5.0mΩ @ VGS=10V (Typ:3.8mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram Application ● Power switching application ● Load switching ● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package NCE01H16 NCE01H16 . |
Datasheet |
NCE01H16 Data Sheet
PDF 324.71KB |
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NCE01H16 |
Part Number | NCE01H16 |
Manufacturer | VBsemi |
Title | N-Channel MOSFET |
Description | NCE01H16-VB NCE01H16-VB Datasheet N-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V ID (A) a Configuration 100 0.0030 180 Single FEATURES • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested . |
Features |
• TrenchFET® Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested TO-220 D Top View GD S G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °Ca TC = 125 °C ID Continuous Source Current (Diode Conduction)a IS. |
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