NCE01H16 Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

NCE01H16 N-Channel Enhancement Mode Power MOSFET

NCE01H16

NCE01H16
NCE01H16 NCE01H16
zoom Click to view a larger image
Part Number NCE01H16
Manufacturer NCE Power Semiconductor
Description The NCE01H16 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Pb Free Product NCE01H16 General Features ● VDS =100V,ID =160A RDS(ON) <5.0mΩ @ VGS=10V (Typ:3.8mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current .
Features
● VDS =100V,ID =160A RDS(ON) <5.0mΩ @ VGS=10V (Typ:3.8mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability Schematic diagram Application
● Power switching application
● Load switching
● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package NCE01H16 NCE01H16 .
Datasheet Datasheet NCE01H16 Data Sheet
PDF 324.71KB
Distributor Stock Price Buy

NCE01H16

VBsemi
NCE01H16
Part Number NCE01H16
Manufacturer VBsemi
Title N-Channel MOSFET
Description NCE01H16-VB NCE01H16-VB Datasheet N-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V ID (A) a Configuration 100 0.0030 180 Single FEATURES • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested .
Features
• TrenchFET® Power MOSFET
• Package with Low Thermal Resistance
• AEC-Q101 Qualifiedd
• 100 % Rg and UIS Tested TO-220 D Top View GD S G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °Ca TC = 125 °C ID Continuous Source Current (Diode Conduction)a IS.


similar datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 NCE01H10
NCE Power Semiconductor
NCE N-Channel Enhancement Mode Power MOSFET Datasheet
2 NCE01H10D
NCE Power Semiconductor
N-Channel Enhancement Mode Power MOSFET Datasheet
3 NCE01H11
NCE Power Semiconductor
NCE N-Channel Enhancement Mode Power MOSFET Datasheet
4 NCE01H13
NCE Power Semiconductor
N-Channel Enhancement Mode Power MOSFET Datasheet
5 NCE01H13D
NCE Power Semiconductor
N-Channel Enhancement Mode Power MOSFET Datasheet
6 NCE01H13WD
NCE Power Semiconductor
N-Channel Enhancement Mode Power MOSFET Datasheet
7 NCE01H14
NCE Power Semiconductor
NCE N-Channel Enhancement Mode Power MOSFET Datasheet
8 NCE01H14C
NCE Power Semiconductor
N-Channel Enhancement Mode Power MOSFET Datasheet
9 NCE01H14D
NCE Power Semiconductor
NCE N-Channel Enhancement Mode Power MOSFET Datasheet
10 NCE01H14T
NCE Power Semiconductor
NCE N-Channel Enhancement Mode Power MOSFET Datasheet
More datasheet from NCE Power Semiconductor
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad