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MTP2N40E |
| Part Number | MTP2N40E |
| Manufacturer | ON Semiconductor |
| Title | Power Field Effect Transistor |
| Description | MTP2N40E Designer’s™ Data Sheet TMOS E−FET.™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced TMOS E−. |
| Features | and VDS(on) Specified at Elevated Temperature http://onsemi.com TMOS POWER FET 2.0 AMPERES, 400 VOLTS RDS(on) = 3.5 W TO−220AB CASE 221A−06 Style 5 D ®G S MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−Source Voltage Drain−Gate Voltage (RGS = 1.0 MΩ) Gate−Source Voltage — Continuous Gate−Source Voltage — Non−Repetitive (tp ≤ 10 ms) Drain Current — Continu. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MTP2N40 |
Fairchild Semiconductor |
(MTP2N35 / MTP2N40) N-Channel Power MOSFETs |
|
| 2 | MTP2N45 |
ART CHIP |
N-Channel Power MOSFET |
|
| 3 | MTP2N45 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 4 | MTP2N20 |
Motorola |
POWER FIELD EFFECT TRANSISTOR |
|
| 5 | MTP2N35 |
ART CHIP |
N-Channel MOSFET |
|
| 6 | MTP2N50 |
ART CHIP |
N-Channel Power MOSFET |
|
| 7 | MTP2N50 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 8 | MTP2N50 |
INCHANGE |
N-Channel MOSFET |
|
| 9 | MTP2N50E |
Motorola |
Power MOSFET |
|
| 10 | MTP2N55 |
Motorola |
Power Field Effect Transistor |
|
Desde 2024. D4U Semiconductor.
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