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| Part Number | MTP23P06V |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | MTP23P06V |
| Manufacturer | Motorola |
| Title | TMOS POWER FET 23 AMPERES 60 VOLTS RDS(on) = 0.120 OHM |
| Description | MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP23P06V/D TMOS Power Field Effect Transistor TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell densi. |
| Features |
of TMOS V • On –resistance Area Product about One –half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology • Faster Switching than E –FET Predecessors Features Common to TMOS V and TMOS E –FETS • Avalanche Energy Specified • IDSS and VDS(on) Specified at Elevated Temperature • Static Parameters are the Same for both TMOS V and TMOS E –FET MAXIMUM RATINGS (TC = 25°C unless otherwise n. |
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