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| Part Number | MTD2955V |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | MTD2955V |
| Manufacturer | Fairchild Semiconductor |
| Title | P-Channel Enhancement Mode Field Effect Transistor |
| Description | This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The r. |
| Features | -12 A, -60 V. RDS(ON) = 0.23 Ω @ VGS = -10 V Low gate charge. Fast switching speed. High performance technology for low RDS(ON). 6 * 6 72 ' * ' R $EVROXWH 0D[LPXP 5DWLQJV 6PERO W '66 W *66 D' 9 hvT prÃWyhtr B hrT prÃWyhtr ÃÃÃÃÃÃÃ U &2!$ 8 ÃyrÃur vrÃrq 3DUDPHWHU 5DWLQJV % 8QLWV W W 6 ± ! H hv Ã9 hvÃ8 rÃÃÃÃ8vÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ . |
| Part Number | MTD2955V |
| Manufacturer | Motorola |
| Title | Power Field Effect Transistor |
| Description | MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTD2955V/D TMOS Power Field Effect Transistor DPAK for Surface Mount TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles . |
| Features |
of TMOS V • On –resistance Area Product about One –half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology • Faster Switching than E –FET Predecessors ™ Data Sheet V™ MTD2955V TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM P –Channel Enhancement –Mode Silicon Gate TM D G S CASE 369A –13, Style 2 DPAK Surface Mount Features Common to TMOS V and TMOS E –FETS • Avalanche En. |
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| 1 | MTD2955E |
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| 2 | MTD2955E |
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| 3 | MTD2001 |
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| 4 | MTD2001M |
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| 6 | MTD2003 |
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| 7 | MTD2003B |
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| 8 | MTD2003F |
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| 9 | MTD2003G |
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| 10 | MTD2005 |
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Desde 2024. D4U Semiconductor.
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