Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | MSD1010T1 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | MSD1010T1 |
| Manufacturer | Leshan Radio Company |
| Title | Low Saturation Voltage |
| Description | . |
| Features | . |
| Part Number | MSD1010T1 |
| Manufacturer | Motorola |
| Title | PNP Silicon Driver Transistors |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™ Order this document by MMBT1010LT1/D Low Saturation Voltage PNP Silicon Driver Transistors Part of the GreenLine™ Portfolio of devices with energy–conserving traits. This PNP Silicon Epitaxial Planar Transistor is designed to conserve energy in general purp. |
| Features |
= GLP
THERMAL CHARACTERISTICS
Rating Power Dissipation TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature Range Symbol PD(1) Max 225 1.8 RθJA TJ Tstg 556 150 – 55 ~ + 150 Unit mW mW/°C °C/W °C °C CASE 318D –03, STYLE 1 SC-59 ELECTRICAL CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collec. |
| Part Number | MSD1010T1 |
| Manufacturer | E-Tech |
| Title | Low Saturation Voltage |
| Description | Low Saturation Voltage PNP Silicon Driver Transistors Part of the GreenLineTM Portfolio of devices with energy–conserving traits. This PNP Silicon Epitaxial Planar Transistor is designed to conserve energy in general purpose driver applications. This device is housed in the SOT-23 and SC–59 packages. |
| Features |
ol P D (1) Max 250 1.8 R θJA TJ T
stg
1 2
Unit mW mW/°C °C/W °C °C
CASE 318D –04, STYLE 1 SC – 59 556 150 –55 —+150 COLLECTOR DEVICE MARKING MMBT1010LT1 = GLP; MSD1010T1 = GLP BASE EMITTER ELECTRICAL CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current DC Current Gain Collector-Emitter. |
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Desde 2024. D4U Semiconductor.
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