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| Part Number | MRF5812 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | MRF5812 |
| Manufacturer | Advanced Power Technology |
| Title | Bipolar Junction Transistor |
| Description | Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 30 2.5 200 Unit Vdc Vdc Vdc mA Thermal Data P D To. |
| Features |
• • • • Low Noise - 2.5 dB @ 500 MHZ Associated Gain = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective SO-8 package SO-8 R1 suffix –Tape and Reel, 500 units R2 suffix –Tape and Reel, 2500 units DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Coll. |
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| 10 | MRF581G |
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Desde 2024. D4U Semiconductor.
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