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| Part Number | MRF553 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | MRF553 |
| Manufacturer | Microsemi |
| Title | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| Description | Designed primarily for wideband large signal stages in the VHF frequency range. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current Thermal Data P D Total Device Dissipation @ . |
| Features |
• Specified @ 12.5 V, 175 MHz Characteristics • Output Power = 1.5 W • Minimum Gain = 11.5 dB • Efficiency 60% (Typ) • Cost Effective PowerMacro Package • Electroless Tin Plated Leads for Improved Solderability MRF553 Power Macro DESCRIPTION: Designed primarily for wideband large signal stages in the VHF frequency range. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collecto. |
| Part Number | MRF553 |
| Manufacturer | Motorola |
| Title | NPN SILICON RF LOW POWER TRANSISTOR |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF553/D The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the VHF frequency range. • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB . |
| Features | . |
| Part Number | MRF553 |
| Manufacturer | ASI |
| Title | NPN SILICON RF TRANSISTOR |
| Description | The ASI MRF553 is designed for Low power amplifier applications. FEATURES: • 12.5 V, 175 MHz. • POUT = 1.5 W • GP = 11.5 min. • η = 60 % (Typ) MAXIMUM RATINGS IC 500 mA VCB 36 V PDISS 3.0 W @ TC = 75 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 41.7 °C/W PACKAGE STYLE MILLIMETERS . |
| Features |
• 12.5 V, 175 MHz. • POUT = 1.5 W • GP = 11.5 min. • η = 60 % (Typ) MAXIMUM RATINGS IC 500 mA VCB 36 V PDISS 3.0 W @ TC = 75 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 41.7 °C/W PACKAGE STYLE MILLIMETERS INCHES DIM MIN MAX MIN MAX A 4.45 5.21 .175 .205 B 1.91 2.54 .075 .100 C 0.84 0.99 .033 .039 D 2.46 2.64 .097 .104 E 8.84 9.73 .348 .383 F 0.20 0.. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MRF553G |
Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 2 | MRF555 |
Motorola |
NPN SILICON RF LOW POWER TRANSISTOR |
|
| 3 | MRF555 |
Advanced Semiconductor |
NPN SILICON RF TRANSISTOR |
|
| 4 | MRF555 |
Microsemi |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 5 | MRF557 |
Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 6 | MRF557G |
Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 7 | MRF559 |
Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 8 | MRF559 |
Microsemi |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 9 | MRF559 |
Motorola |
NPN SILICON HIGH FREQUENCY TRANSISTOR |
|
| 10 | MRF559G |
Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
Desde 2024. D4U Semiconductor.
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