MRF151A FET Datasheet, Distribuidor, stock y mejor precio

Part Number	MRF151A
Manufacturer	Tyco Electronics
Title	RF Power Field-Effect Transistor
Description	www.DataSheet4U.com ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA) Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) Gate–Body Leakage Current (VGS = 20 V, VDS = 0) .
Features	= 150 W (PEP), f = 30; 30.001 MHz, ID (Max) = 3.75 A) Intermodulation Distortion (1) (VDD = 50 V, Pout = 150 W (PEP), f = 30 MHz, f2 = 30.001 MHz, IDQ = 250 mA) Load Mismatch (VDD = 50 V, Pout = 150 W (PEP), f1 = 30; 30.001 MHz, IDQ = 250 mA, VSWR 30:1 at all Phase Angles) Gps η 18 — 40 22 13 45 — — — dB % dB IMD(d3) IMD(d11) ψ No Degradation in Output Power — — – 32 – 60 – 30 — CLASS A PERFORM.

No.	Parte #	Fabricante	Descripción
1	MRF151	Tyco Electronics	N-CHANNEL BROADBAND RF POWER MOSFET
2	MRF151	Motorola	N-CHANNEL BROADBAND RF POWER MOSFET
3	MRF1511NT1	Motorola	RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET
4	MRF1511T1	Motorola	RF Power Field Effect Transistor
5	MRF1513NT1	Freescale Semiconductor	RF Power Field Effect Transistor N-Channel Enhancement Mode Lateral MOSFET
6	MRF1513T1	Motorola	RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET
7	MRF1517NT1	Freescale Semiconductor	RF Power Field Effect Transistor
8	MRF1517T1	Motorola	RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET
9	MRF1518NT1	Motorola	RF Power Field Effect Transistor
10	MRF1518T1	Motorola	RF Power Field Effect Transistor

MRF151A Datasheet. existencias, precio