Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | MPSA77 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | MPSA77 |
| Manufacturer | KEC |
| Title | EPITAXIAL PLANAR PNP TRANSISTOR |
| Description | SEMICONDUCTOR TECHNICAL DATA DARLINGTON TRANSISTOR B MPSA77 EPITAXIAL PLANAR PNP TRANSISTOR C FEATURES ᴌComplementary to MPSA27. A N K D E G MAXIMUM RATINGS (Ta=25ᴱ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation. |
| Features | ᴌComplementary to MPSA27. A N K D E G MAXIMUM RATINGS (Ta=25ᴱ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCES VEBO IC PC Tj Tstg RATING -60 -60 -10 -500 625 150 -55ᴕ150 UNIT V V L H F F V mA mW ᴱ ᴱ 1 2 3 M C DIM A B C D E F G H J K L M N MIL. |
| Part Number | MPSA77 |
| Manufacturer | ON Semiconductor |
| Title | PNP Transistors |
| Description | MPSA75, MPSA77 Darlington Transistors PNP Silicon Features • These are Pb--Free Devices* MAXIMUM RATINGS Rating Collector--Emitter Voltage MPSA75 MPSA77 Symbol VCES Value --40 --60 Unit Vdc Emitter--Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25°C Derate above. |
| Features |
• These are Pb--Free Devices* MAXIMUM RATINGS Rating Collector--Emitter Voltage MPSA75 MPSA77 Symbol VCES Value --40 --60 Unit Vdc Emitter--Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VEBO IC PD --10 --500 625 5.0 Vdc mAdc mW mW/°C Operating and Storage Junction Temperature Range TJ, Tstg --55 to +150 °C THERMAL CHARACTERISTICS . |
| Part Number | MPSA77 |
| Manufacturer | Fairchild Semiconductor |
| Title | PNP Darlington Transistor |
| Description | MPSA77 MPSA77 PNP Darlington Transistor • This device is designed for applications requiring extremely high current gain at currents to 800mA. • Sourced from process 61. 1 TO-92 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * Ta=25°C unless otherwise noted Symbol VCES VCBO VEBO IC TJ. |
| Features | IC = -100µA, IB = 0 VCB = -30V, IE = 0 VEB = -10V, IC = 0 IC = -10mA, VCE = -5.0V IC = -100mA, VCE = -5.0V IC = -100mA, IB = -0.1mA IC = -100mA, VCE = -5.0mA IC = -10mA, VCE = -5.0V f = 100MHz 100 10,000 10,000 -1.5 -2.0 V V MHz Min. -60 -100 -100 Max. Units V nA nA Collector-Emitter Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Volt. |
| Part Number | MPSA77 |
| Manufacturer | Central Semiconductor |
| Title | SILICON PNP DARLINGTON TRANSISTORS |
| Description | The CENTRAL SEMICONDUCTOR MPSA75 series devices are silicon PNP Darlington transistors, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter V. |
| Features | 0 --- 500 --- 100 40 40 - 1.5 - 2.0 10K 10K 125 - MPSA76 MIN MAX -- 100 --- 500 -- 100 50 50 - 1.5 - 2.0 10K 10K 125 - MPSA77 MIN MAX --- 100 --- 500 - 100 60 60 - 1.5 - 2.0 10K 10K 125 - UNITS V V V mA mW °C °C/W UNITS nA nA nA nA nA nA nA V V V V MHz R1 (18-March 2014) MPSA75 MPSA76 MPSA77 SILICON PNP DARLINGTON TRANSISTORS TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Co. |
| Part Number | MPSA77 |
| Manufacturer | Motorola |
| Title | Transistors |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPSA75/D Darlington Transistors PNP Silicon MPSA75 MPSA77 COLLECTOR 3 BASE 2 EMITTER 1 MAXIMUM RATINGS Rating Collector – Emitter Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Dera. |
| Features |
–30 V, VBE = 0) (VCE = –50 V, VBE = 0) Emitter Cutoff Current (VEB = –10 Vdc) MPSA75 MPSA77 MPSA75 MPSA77 MPSA75 MPSA77 ICES MPSA75 MPSA77 IEBO — — — — — — –500 –500 –100 nAdc V(BR)CES V(BR)CBO ICBO — — — — –100 –100 nAdc –40 –60 –40 –60 — — — — — — — — Vdc Vdc nAdc ON CHARACTERISTICS DC Current Gain (IC = –10 mA, VCE = –5.0 V) (IC = –100 mA, VCE = –5.0 V) Collector – Emitter Saturation Voltage . |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MPSA70 |
Central Semiconductor |
PNP SILICON TRANSISTORS |
|
| 2 | MPSA70 |
ON Semiconductor |
PNP Transistor |
|
| 3 | MPSA70 |
Motorola |
Amplifier Transistor |
|
| 4 | MPSA75 |
Philips |
PNP Transistor |
|
| 5 | MPSA75 |
ON Semiconductor |
PNP Transistors |
|
| 6 | MPSA75 |
Motorola |
Transistors |
|
| 7 | MPSA75 |
Central Semiconductor |
SILICON PNP DARLINGTON TRANSISTORS |
|
| 8 | MPSA76 |
Motorola |
DARLINGTON TRANSISTOR |
|
| 9 | MPSA76 |
Philips |
PNP Transistor |
|
| 10 | MPSA76 |
Central Semiconductor |
SILICON PNP DARLINGTON TRANSISTORS |
|
Desde 2024. D4U Semiconductor.
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