Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | MPSA63 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | MPSA63 |
| Manufacturer | ON Semiconductor |
| Title | PNP Transistor |
| Description | MPSA62, MPSA63, MPSA64 MPSA64 is a Preferred Device Darlington Transistors PNP Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Collector −Emitter Voltage MPSA62 MPSA63/64 Collector −Base Voltage MPSA62 MPSA63/64 Emitter −Base Voltage Collec. |
| Features |
• Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Collector −Emitter Voltage MPSA62 MPSA63/64 Collector −Base Voltage MPSA62 MPSA63/64 Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range VEBO IC PD 62. |
| Part Number | MPSA63 |
| Manufacturer | KEC |
| Title | PNP TRANSISTOR |
| Description | SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. B MPSA62/63/64 EPITAXIAL PLANAR PNP TRANSISTOR C FEATURES A ᴌComplementary to MPSA13/14. N K E G CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Pow. |
| Features | A ᴌComplementary to MPSA13/14. N K E G CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range MPSA62 MPSA63/64 MPSA62 MPSA63/64 SYMBOL VCBO RATING -20 -30 -20 -30 -10 -500 625 150 -55ᴕ150 UNIT V F H F L M C VCES VEBO IC PC Tj Tstg V V mA mW ᴱ ᴱ 1 2 3 J MAXIMUM. |
| Part Number | MPSA63 |
| Manufacturer | Motorola |
| Title | Transistor |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPSA62/D Darlington Transistors PNP Silicon COLLECTOR 3 MPSA62 thru MPSA64 * BASE 2 MPSA55, MPSA56 For Specifications, See MPSA05, MPSA06 Data *Motorola Preferred Device EMITTER 1 MAXIMUM RATINGS Rating Collector – Emitter Voltage. |
| Features |
eristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = –100 µAdc, VBE = 0) Collector Cutoff Current (VCB= –15 Vdc, IE = 0) (VCB = –30 Vdc, IE = 0) Emitter Cutoff Current (VEB = –10 Vdc, IC = 0) V(BR)CES MPSA62 MPSA63, MPSA64 ICBO MPSA62 MPSA63, MPSA64 IEBO — — — –100 –100 –100 nAdc –20 –30 — — nAdc Vdc Preferred devices are Motorola recommended choices for fu. |
| Part Number | MPSA63 |
| Manufacturer | SEMTECH |
| Title | PNP Silicon Epitaxial Planar Transistor |
| Description | MPSA63 / 64 PNP Silicon Epitaxial Planar Transistor Darlington Transistor for high gain amplification Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperat. |
| Features | . |
| Part Number | MPSA63 |
| Manufacturer | Central Semiconductor |
| Title | PNP Transistor |
| Description | The CENTRAL SEMICONDUCTOR MPSA62 series devices are silicon PNP Darlington transistors, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain. MARKING: FULL PART NUMBER TO-92 CASE MPSA63 MPSA65 MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage . |
| Features | IEBO VEB=8.0V -- -- - - - 100 BVCES IC=100μA 20 - 30 - 30 - 30 - VCE(SAT) IC=10mA, IB=10μA - 1.0 - - -- -- VCE(SAT) IC=100mA, IB=0.1mA -- - 1.5 - 1.5 - 1.5 VBE(ON) VCE=5.0V, IB=10mA - 1.4 - - -- -- VBE(ON) VCE=5.0V, IB=100mA -- - 2.0 - 2.0 - 2.0 hFE VCE=5.0V, IC=10mA 20K - 5K - 10K - 50K - hFE VCE=5.0V, IC=100mA - - 10K - 20K - 20K - fT VCE=5.0V, IC=100mA, f=100MHz - - 1. |
| Part Number | MPSA63 |
| Manufacturer | Philips Semiconductors |
| Title | (MPSA63 / MPSA64) Small-signal Transistors |
| Description | Philips Semiconductors Small-signal Transistors LEADED DEVICES (continued) NPN LOW-POWER DARLINGTON TRANSISTORS TYPE NUMBER 2N6427 BC517 BC617 BC618 MPSA13 MPSA14 MPSA25 MPSA26 MPSA27 PACKAGE TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 VCES max. (V) 30 30 40 55 30 30 40 50 60 IC max. (mA). |
| Features | MPL. PAGE 255 830 830 220 typ. BC517 MPSA13 MPSA14 5000 10000 1997 Jul 21 16 This datasheet has been downloaded from http://www.digchip.com at this page . |
| Part Number | MPSA63 |
| Manufacturer | NTE |
| Title | Silicon PNP Transistors |
| Description | MPSA63 Silicon PNP Transistor Darlington Amplifier, Preamp, TO−92 Type Package Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified) Collector−Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Co. |
| Features | C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Note 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. These are steady state limits and based on a maximum junction temperature of +150C. Electrical Characteristics: (TA = +25C unless otherwise specif. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MPSA62 |
ON Semiconductor |
PNP Transistor |
|
| 2 | MPSA62 |
Central Semiconductor |
PNP Transistor |
|
| 3 | MPSA62 |
KEC |
PNP Transistor |
|
| 4 | MPSA62 |
Motorola |
Transistor |
|
| 5 | MPSA64 |
Samsung semiconductor |
PNP Transistor |
|
| 6 | MPSA64 |
SEMTECH |
PNP Silicon Epitaxial Planar Transistor |
|
| 7 | MPSA64 |
NTE |
Silicon PNP Transistor |
|
| 8 | MPSA64 |
ON Semiconductor |
PNP Transistor |
|
| 9 | MPSA64 |
Central Semiconductor |
PNP Transistor |
|
| 10 | MPSA64 |
KEC |
PNP TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
|