Busque con el número de pieza junto con el fabricante o la descripción
MMG05N60D |
Click to view a larger image
| Part Number | MMG05N60D |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMG05N60D/D Designer’s™ Data Sheet Insulated Gate Bipolar Transistor N−Channel Enhancement−Mode Silicon Gate This IGBT contains a built−in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in efficient operation at higher frequencies. This device is ide. |
| Features | inuous @ TC = 90°C Collector Current — Repetitive Pulsed Current (1) Total Device Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range Thermal Resistance — Junction to Case − IGBT Thermal Resistance — Junction to Ambient VCES VCGR VCGR IC25 IC90 ICM PD TJ, Tstg RθJC RθJA 600 600 ± 15 0.5 0.3 2.0 1.0 −55 to 150 30 150 Vdc Vdc Vdc Adc Watt °C °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds TL 260 °C UNCLAMPED DRAIN−TO−SOURCE AVALANCHE CHARACTERISTICS (TC ≤ 150°C) Single Pulse Drain−to−Source Avalanche Energy − Starting @ TC = 25°C E. |
| Datasheet |
 MMG05N60D Data Sheet
PDF 157.08KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MMG |
Rubycon |
METALLIZED POLYESTER FILM CAPACITORS |
|
| 2 | MMG1001NT1 |
Freescale Semiconductor |
Gallium Arsenide CATV Integrated Amplifier |
|
| 3 | MMG1001R2 |
Motorola |
Gallium Arsenide CATV Integrated Amplifier |
|
| 4 | MMG1001T1 |
Freescale Semiconductor |
Gallium Arsenide CATV Integrated Amplifier |
|
| 5 | MMG100D120B6HN |
MacMic |
IGBT |
|
| 6 | MMG100D120B6TN |
MacMic |
IGBT |
|
| 7 | MMG100D170B |
MacMic |
IGBT |
|
| 8 | MMG100D170B6EN |
MacMic |
IGBT |
|
| 9 | MMG100D170B6TC |
MacMic |
IGBT |
|
| 10 | MMG100H120H6HN |
MacMic |
IGBT |
|
Desde 2024. D4U Semiconductor.
|