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MMBT3906W |
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| Part Number | MMBT3906W |
| Manufacturer | UPM |
| Description | .007(.20)MIN .103(2.60) .086(2.20) UPM MMBT3906W PNP GENERAL PURPOSE SWITCHING TRANSISTOR Voltage Range 40 Volts Power 150 Watts Features * PNP epitaxial silicon, planar design * Collector-emitter voltage VCE = -40V * Collector current IC = -200mA * Both normal and Pb free product are available : Normal : 80~95% Sn, 5~20% Pb Pb free: 98.5% Sn above Mechan. |
| Features |
* PNP epitaxial silicon, planar design * Collector-emitter voltage VCE = -40V * Collector current IC = -200mA * Both normal and Pb free product are available : Normal : 80~95% Sn, 5~20% Pb Pb free: 98.5% Sn above Mechanical Data Case: SOT-323, Plastic Terminals: Solderable per MIL-STD-202, Method 208 Approx. Weight: 0.0052 gram Marking: S2A Top View 3 Collector 1 BASE 3 COLLECTOR DO-41 SOT-23 .119(3.00) .110(2.80) .056(1.40) .047(1.20) .083(2.10) .066(1.70) .006(.15)MAX .020(.50) .013(.35) .044(1.10) .035(0.90) .006(.15) .002(.05) 1 Base 2 Emitter ABSOLUTE RATINGS PARAMETER Co. |
| Datasheet |
 MMBT3906W Data Sheet
PDF 3.12MB |
| Distributor | Stock | Price | Buy |
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MMBT3906W |
| Part Number | MMBT3906W |
| Manufacturer | SeCoS |
| Title | General Purpose Transistor |
| Description | Elektronische Bauelemente MMBT3906W PNP Silicon General Purpose Transistor FEATURES RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free · Epitaxial Planar Die Construction · Complementary NPN Type Available (MMBT3904W) · Ideal for Medium Power Amplification and Switching "Lead . |
| Features |
RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
· Epitaxial Planar Die Construction · Complementary NPN Type Available (MMBT3904W) · Ideal for Medium Power Amplification and Switching "Lead free is available" A L COLLECTOR 3 3 Top View BS 1 BASE 2 EMITTER 1 2 SC-70 SOT-323 V D MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Ba. |
MMBT3906W |
| Part Number | MMBT3906W |
| Manufacturer | Pan Jit International |
| Title | PNP GENERAL PURPOSE SWITCHING TRANSISTOR |
| Description | MMBT3906W PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volt POWER 150 mWatt FEATURES • PNP epitaxial silicon, planar design • Collector-emitter voltage VCE = -40V • Collector current IC = -200mA • Lead free in compliance with EU RoHS 2011/65/EU directive • Green molding compound as per IEC612. |
| Features |
• PNP epitaxial silicon, planar design • Collector-emitter voltage VCE = -40V • Collector current IC = -200mA • Lead free in compliance with EU RoHS 2011/65/EU directive • Green molding compound as per IEC61249 Std. . (Halogen Free) MECHANICAL DATA • Case: SOT-323, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Apporx. Weight: 0.0001 ounce, 0.005 gram • Marking: S2A ABSOLUTE RATIN. |
MMBT3906W |
| Part Number | MMBT3906W |
| Manufacturer | WEITRON |
| Title | General Purpose Transistor |
| Description | General Purpose Transistor PNP Silicon M aximum R atings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Thermal Characteristics Characteristics Total Device Dissipation TA=25 C Thermal Resistance, Junction to Ambient Junction and Storage, Te. |
| Features | commended footprint. 2. Pulse Test:Pulse Width <= 300 µS, Duty Cycle <= 2.0%. V(BR)CEO -40 - Vdc V(BR)CBO -40 - Vdc V(BR)EBO -5.0 - Vdc IBL - -50 nAdc ICEX - -50 nAdc WEITRON http://www.weitron.com.tw MMBT3906W Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min On Characteristics (2) DC Current Gain (IC= -0.1 mAdc, VCE= -1.0Vdc. |
MMBT3906W |
| Part Number | MMBT3906W |
| Manufacturer | Kexin |
| Title | General Purpose Transistor |
| Description | SMD Type General Purpose Transistor MMBT3906W TransistIoCrs Features General purpose transistor. Pb?Free package is available. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total De. |
| Features | General purpose transistor. Pb?Free package is available. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total Device Dissipation FR-5 Board Thermal Resistance, Junction-to-Ambient Junction temperature Storage temperature Symbol VCEO VCBO VEBO IC PD RèJA Tj Tstg Rating -40 -40 -5 -2. |
MMBT3906W |
| Part Number | MMBT3906W |
| Manufacturer | Rectron |
| Title | Plastic-Encapsulate Transistors |
| Description | only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron produ. |
| Features | SOT-323 z Complementary to MMBT3904W z Power Dissipation of 200mW z High Stability and High Reliability Mechanical Data z SOT-323 Small Outline Plastic Package z Epoxy UL: 94V-0 z Mounting Position: Any Marking: K5N Maximum Ratings & Thermal Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified.) Parameters Symbol Value Unit Collector-Base Voltage VCBO -40 . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MMBT3906 |
Diodes |
40V PNP SMALL SIGNAL TRANSISTOR |
|
| 2 | MMBT3906 |
CITC |
PNP Transistor |
|
| 3 | MMBT3906 |
GOOD-ARK |
PNP Transistor |
|
| 4 | MMBT3906 |
ON Semiconductor |
PNP General-Purpose Amplifier |
|
| 5 | MMBT3906 |
STMicroelectronics |
SMALL SIGNAL PNP TRANSISTOR |
|
| 6 | MMBT3906 |
Fairchild |
PNP General Purpose Amplifier |
|
| 7 | MMBT3906 |
Infineon Technologies AG |
PNP Silicon Switching Transistor |
|
| 8 | MMBT3906 |
UTC |
PNP SILICON TRANSISTOR |
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| 9 | MMBT3906 |
NXP |
PNP switching transistor |
|
| 10 | MMBT3906 |
HOTTECH |
SWITCHING TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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