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| Part Number | MMBT2907A |
| Distributor | Stock | Price | Buy |
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| Part Number | MMBT2907A |
| Manufacturer | Diotec |
| Title | SMD General Purpose PNP Transistors |
| Description | MMBT2907A MMBT2907A SMD General Purpose PNP Transistors SMD Universal-PNP-Transistoren IC = -600 mA hFE1 = 100 ... 300 Tjmax = 150°C VCES = -60 V Ptot = 250 mW Version 2018-01-18 SOT-23 (TO-236) 0.4+0.1 -0.05 2.9 ±0.1 3 Type Code 1 2 1.9±0.1 1=B 2=E 1.1+0.1 -0.2 3=C 2.4 ±0.2 1.3±0.1 EL. |
| Features | General Purpose Compliant to RoHS, REACH, Conflict Minerals 1) Mechanical Data 1) Taped and reeled Weight approx. Case material WEEE RoHS Pb 3000 / 7“ 0.01 g UL 94V-0 Typische Anwendungen Signalverarbeitung, Schalten, Verstärken Standardausführung 1) Besonderheiten Universell anwendbar Konform zu RoHS, REACH, Konfliktmineralien 1 Mechanische Daten 1) Gegurtet auf Rolle Gewicht ca. Gehäusemateri. |
| Part Number | MMBT2907A |
| Manufacturer | Microsemi |
| Title | PNP General Purpose Amplifier |
| Description | 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 MMBT2907A Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation C Pin Configuration Top View PNP General Purpose Amplifier SOT-23 A D 2F B E Electrical Characteristics @ 25°C Unless. |
| Features |
• • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation C Pin Configuration Top View PNP General Purpose Amplifier SOT-23 A D 2F B E Electrical Characteristics @ 25°C Unless Otherwise Specified Symbol Parameter Collector-Emitter Breakdown Voltage* (I C=10mAdc, IB=0) Collector-Base Breakdown Voltage (I C=10µ Adc, IE=0) Emitter-Base Breakdown Voltage (I E=10µ Adc, IC=0) Base Cu. |
| Part Number | MMBT2907A |
| Manufacturer | Taiwan Semiconductor |
| Title | PNP Transistor |
| Description | Small Signal Product Features ◇ Epitaxial planar die construction ◇ Surface device type mounting ◇ Moisture sensitivity level 1 ◇ Matte Tin(Sn) lead finish with Nickel(Ni) underplate ◇ Pb free version and RoHS compliant ◇ Green compound (Halogen free) with suffix "G" on packing code and prefix "G" o. |
| Features | ◇ Epitaxial planar die construction ◇ Surface device type mounting ◇ Moisture sensitivity level 1 ◇ Matte Tin(Sn) lead finish with Nickel(Ni) underplate ◇ Pb free version and RoHS compliant ◇ Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code Mechanical Data ◇ Case : SOT- 23 small outline plastic package ◇ Terminal : Matte tin plated, lead free, solderable pe. |
| Part Number | MMBT2907A |
| Manufacturer | CITC |
| Title | PNP Transistor |
| Description | MMBT2907 / MMBT2907A 600mA General Purpose PNP Epitaxial Planar Transistor ■ Features • High collector-emitterbreakdien voltage. (BVCEO = -60V@IC=-10mA). • Small load switch transistor with high gain and low stauration voltage, is designed for general purpose amflifier and switching applications at. |
| Features |
• High collector-emitterbreakdien voltage. (BVCEO = -60V@IC=-10mA). • Small load switch transistor with high gain and low stauration voltage, is designed for general purpose amflifier and switching applications at collector current. • Suffix "G" indicates Halogen-free part, ex.MMBT2907G. • Lead-free parts for green partner, exceeds environmental standards of MIL-STD-19500 /228 ■ Mechanical data • . |
| Part Number | MMBT2907A |
| Manufacturer | LITE-ON |
| Title | PNP Transistor |
| Description | PNP General Purpose Transistor MMBT2907A FEATURES • Ideal for Medium Power Amplification and Switching • Complementary PNP Type available(MMBT2222A) MECHANICAL DATA • Case: SOT-23 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, (No Br. Sb. CI) • Lead Free i. |
| Features |
• Ideal for Medium Power Amplification and Switching • Complementary PNP Type available(MMBT2222A) MECHANICAL DATA • Case: SOT-23 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, (No Br. Sb. CI) • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector C. |
| Part Number | MMBT2907A |
| Manufacturer | UTC |
| Title | PNP GENERAL PURPOSE AMPLIFIER |
| Description | This UTC MMBT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 600 mA. ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package MMBT2907AL-AE3-R MMBT2907AG-AE3-R SOT-23 MMBT2907AL-AL3-R MMBT2907AG-AL3-R SOT-323 Note: Pin assi. |
| Features | TJ +150 °С Operating Temperature TOPR -40 ~ +150 C Storage Temperature TSTG -55 ~ +150 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS Junction to Case PARAMETER SOT-23 SOT-323 SYMBOL θJA RATINGS 357 4. |
| Part Number | MMBT2907A |
| Manufacturer | ON Semiconductor |
| Title | PNP Transistor |
| Description | • High DC Current Gain (hFE) Range: 100 ~ 300 • High-Current Gain Bandwidth Product (fT): 200 MHz (Minimum) The PN2907A, MMBT2907A, and PZT2907A are 60 V PNP bipolar transistors designed for use as a generalpurpose amplifier or switch in applications that require up to 500 mA. Offered in an ultra-. |
| Features |
Description
• High DC Current Gain (hFE) Range: 100 ~ 300 • High-Current Gain Bandwidth Product (fT): 200 MHz (Minimum) The PN2907A, MMBT2907A, and PZT2907A are 60 V PNP bipolar transistors designed for use as a generalpurpose amplifier or switch in applications that require up to 500 mA. Offered in an ultra-small surface-mount • Maximum Turn-On Time (ton): 45 ns package (SOT-223), the PZT290. |
| Part Number | MMBT2907A |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Low Voltage Use ·Ultra Super Mini Mold Package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low noise and small signal amplifiers from VHF band to UHF band ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-B. |
| Features | uration Voltage isc website：www.iscsemi.cn CONDITIONS MIN TYP. MAX UNIT IC= -10mA ; IB= 0 -60 V VCE= -50V; IE= 0 -0.1 μA VCE= -30V; VBE=-0.5V -0.05 μA IC=-0.1mA ; VCE= -10V IC=1mA ; VCE= -10V IC=-10mA ; VCE= -10V IC=-150mA ; VCE= -10V IC=-500mA ; VCE= -10V 75 100 100 100 300 50 IC= -150mA ,IB= -15mA -0.4 V IC= -500mA ,IB= -50mA -1.6 V IC= -150mA ,IB= -15mA -1.3 V IC= -500. |
| Part Number | MMBT2907A |
| Manufacturer | GME |
| Title | PNP General Purpose Amplifier |
| Description | Production specification PNP General Purpose Amplifier FEATURES Epitaxial planar die construction. Complementary NPN type available Pb Lead-free MMBT2222A. Ideal for medium power amplification and switching. MSL 1 APPLICATIONS This device is designed as a general purpose amplifier . |
| Features |
Epitaxial planar die construction. Complementary NPN type available Pb Lead-free MMBT2222A. Ideal for medium power amplification and switching. MSL 1 APPLICATIONS This device is designed as a general purpose amplifier and switching. The useful dynamic range extends to 600mA as a switch and to 100MHz as a amplifier. ORDERING INFORMATION Type No. Marking MMBT2907A 2F MMBT29. |
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| 1 | MMBT2907 |
GME |
PNP General Purpose Amplifier |
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| 2 | MMBT2907 |
MIC |
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| 3 | MMBT2907 |
ART CHIP |
PNP GENERAL PURPOSE AMPLIFIER |
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| 4 | MMBT2907 |
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| 5 | MMBT2907 |
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| 6 | MMBT2907 |
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| 7 | MMBT2907 |
Diotec |
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| 8 | MMBT2907 |
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| 9 | MMBT2907 |
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| 10 | MMBT2907 |
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Desde 2024. D4U Semiconductor.
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