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MMBF170 N-Channel MOSFET


MMBF170
Part Number MMBF170
Distributor Stock Price Buy
Fairchild
MMBF170
Part Number MMBF170
Manufacturer Fairchild
Title N-Channel Enhancement Mode Field Effect Transistor
Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applica.
Features
■ High density cell design for low RDS(ON).
■ Voltage controlled small signal switch.
■ Rugged and reliable.
■ High saturation current capability. BS170 MMBF170 D D GS TO-92 S SOT-23 G Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter BS170 MMBF170 VDSS VDGR VGSS ID Drain-Source Voltage Drain-Gate Voltage (RGS ≤ 1MΩ) Gate-Source Voltage Drain Current - Continu.
ON Semiconductor
MMBF170
Part Number MMBF170
Manufacturer ON Semiconductor
Title N-channel MOSFET
Description These N−Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applicatio.
Features
• High Density Cell Design for Low RDS(ON)
• Voltage Controlled Small Signal Switch
• Rugged and Reliable
• High Saturation Current Capability
• These are Pb−Free Devices DATA SHEET www.onsemi.com BS170 DGS TO−92 3 4.825x4.76 CASE 135AN D GS TO−92 3 4.83x4.76 LEADFORMED CASE 135AR MMBF170 D G S SOT−23 CASE 318−08 Drain Gate Source MARKING DIAGRAM BS170 ALYW 6ZM 1 BS170, 6Z = Device Code A.

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