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| Part Number | MMBD352 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | MMBD352 |
| Manufacturer | Won-Top Electronics |
| Title | SURFACE MOUNT SCHOTTKY BARRIER DIODE |
| Description | ® WON-TOP ELECTRONICS MMBD352 / 353 / 354 / 355 SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features Very Low Capacitance L Low Forward Voltage PN Junction Guard Ring for Transient and A ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammabi. |
| Features |
Very Low Capacitance L Low Forward Voltage PN Junction Guard Ring for Transient and A ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability B C Classification 94V-0 M Mechanical Data Case: SOT-23, Molded Plastic Terminals: Plated Leads Solderable per ED H K J SOT-23 Dim Min Max A 0.37 0.51 B 1.19 1.40 C 2.10 2.5. |
| Part Number | MMBD352 |
| Manufacturer | Motorola |
| Title | DUAL HOT CARRIER MIXER DIODE |
| Description | MAXIMUM RATINGS Rating Continuous Reverse Voltage Symbol vR THERMAL CHARACTERISTICS Characteristic Symbol •Total Device Dissipation, Ta = 25°C Derate above 25°C PD Storage Temperature Tstg "Thermal Resistance Junction to Ambient RftJA •Package mounted on 99.5% alumina 10 x 8 x 0.6 mm. Val. |
| Features | . |
| Part Number | MMBD352 |
| Manufacturer | LGE |
| Title | Dual Hot Carrier Mixer Diodes |
| Description | MMBD352-355 Dual Hot Carrier Mixer Diodes SOT-23 Features Very low capacitance— Less than 1.0pF@zero V. Low forward voltage—IF=10mA. Power dissipation Pd=300mW Pb/RoHS Free Applications Designed primarily for UHF mixer applications. Dimensions in inches and (millimeters) MMBD352 MMBD35. |
| Features | Very low capacitance— Less than 1.0pF@zero V. Low forward voltage—IF=10mA. Power dissipation Pd=300mW Pb/RoHS Free Applications Designed primarily for UHF mixer applications. Dimensions in inches and (millimeters) MMBD352 MMBD353 Ordering Information Type No. Marking MMBD354 MMBD355 Package Code MMBD352 MMBD353 MMBD354 MMBD355 M5G M4F M6H MJ1 SOT-23 SOT-23 SOT-23 SOT-23 MAXIM. |
| Part Number | MMBD352 |
| Manufacturer | GME |
| Title | Dual Hot Carrier Mixer Diodes |
| Description | Dual Hot Carrier Mixer Diodes FEATURES z Very low capacitance— Less than 1.0pF@zero V. Pb Lead-free z Low forward voltage—IF=10mA. z Power dissipation Pd=300mW z Pb-Free package is available. APPLICATIONS z Designed primarily for UHF mixer applications. Production specification MMBD352/353/35. |
| Features | z Very low capacitance— Less than 1.0pF@zero V. Pb Lead-free z Low forward voltage—IF=10mA. z Power dissipation Pd=300mW z Pb-Free package is available. APPLICATIONS z Designed primarily for UHF mixer applications. Production specification MMBD352/353/354/355 MMBD352 MMBD353 MMBD354 MMBD355 ORDERING INFORMATION Type No. Marking MMBD352 MMBD353 MMBD354 MMBD355 M5G M4F M6H MJ1 SOT-23. |
| Part Number | MMBD352 |
| Manufacturer | ON |
| Title | Dual Hot Carrier Mixer Diodes |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBD352LT1/D Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Vol. |
| Features |
CATHODE
3 CATHODE/ANODE
2 ANODE
MMBD353LT1 CASE 318 – 08, STYLE 19 SOT – 23 (TO – 236AB) DEVICE MARKING MMBD352LT1 = M5G; MMBD353LT1 = M4F; MMBD354LT1 = M6H; MMBD355LT1 = MJ1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symb ol Min Max Unit 3 CATHODE ANODE 1 2 ANODE MMBD354LT1 CASE 318 – 08, STYLE 9 SOT – 23 (TO – 236AB) OFF CHARACTERISTICS Forw. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MMBD352LT1 |
ON |
Dual Hot Carrier Mixer Diodes |
|
| 2 | MMBD352LT1 |
Leshan Radio Company |
Dual Hot Carrier Mixer Diodes |
|
| 3 | MMBD352LT1 |
Motorola |
(MMBD35xLT1) Dual Hot Carrier Mixer Diodes |
|
| 4 | MMBD352LT1G |
ON Semiconductor |
Dual Hot Carrier Mixer Diodes |
|
| 5 | MMBD352W |
PAN JIT |
SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE |
|
| 6 | MMBD352W |
WON-TOP |
SURFACE MOUNT SCHOTTKY BARRIER DIODE |
|
| 7 | MMBD352W |
GME |
Schottky Barrier Diode |
|
| 8 | MMBD352WT1 |
ON |
Dual Shottky Barrier Diode |
|
| 9 | MMBD352WT1 |
Leshan Radio Company |
Dual Schottky Barrier Diode |
|
| 10 | MMBD352WT1 |
Motorola |
Dual Schottky Barrier Diode |
|
Desde 2024. D4U Semiconductor.
|