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| Part Number | MJE4353 |
| Distributor | Stock | Price | Buy |
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| Part Number | MJE4353 |
| Manufacturer | SavantIC |
| Title | (MJE4350 - MJE4353) SILICON POWER TRANSISTOR |
| Description | ·With TO-3PN package www.datasheet4u.com ·Respectively complement to type MJE4340/4341/4342/4343 ·DC current gain hFE=8(Min)@IC=16A APPLICATIONS ·For use in high power audio amplifier and switching regulator circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION MJ. |
| Features | Thermal resistance junction to case MAX 1.0 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER MJE4350 MJE4351 IC=-100mA ;IB=0 MJE4352 MJE4353 VCE(sat)-1 VCE(sat)-2 VBE(sat) VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltag. |
| Part Number | MJE4353 |
| Manufacturer | NTE |
| Title | Silicon PNP Transistor |
| Description | The MJE4343 (NPN) and MJE4353 (PNP) are silicon complementary transistors in a TO−3PN type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits. Features: D High Collector−Emitter Sustaining Voltage: VCEO(sus) = 160V D High DC Current Ga. |
| Features | D High Collector−Emitter Sustaining Voltage: VCEO(sus) = 160V D High DC Current Gain: hFE = 35 Typ @ IC = 8A D Low Collector−Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 8A Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V Collector−Base Voltage, VCB . . . . . . . . . . . |
| Part Number | MJE4353 |
| Manufacturer | INCHANGE |
| Title | Silicon PNP Power Transistor |
| Description | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -160V(Min) ·DC current gain - : hFE = 15 (Min) @IC= -8 A : hFE = 8 (Min) @IC= -16A ·Complement to Type MJE4343 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For use in high power audio amplifier . |
| Features | Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -100mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -8A ;IB= -0.8A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -16A ;IB= -2A VBE(sat) Base-Emitter Saturation Voltage IC= -16A ;IB= -2A VBE(on) Base-Emitter On Voltage IC= -16A ; VCE= -4V ICBO Collector-Ba. |
| Part Number | MJE4353 |
| Manufacturer | ON Semiconductor |
| Title | PNP Transistor |
| Description | MJE4343 (NPN), MJE4353 (PNP) High-Voltage - High Power Transistors . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. Features • High Collector−Emitter Sustaining Voltage − NPN PNP VCEO(sus) = 160 Vdc − MJE4343 MJE4353 • High DC Current . |
| Features |
• High Collector−Emitter Sustaining Voltage − NPN PNP VCEO(sus) = 160 Vdc − MJE4343 MJE4353 • High DC Current Gain − @ IC = 8.0 Adc hFE = 35 (Typ) • Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 8.0 Adc • These are Pb−Free Devices MAXIMUM RATINGS Rating Symbol Max Collector−Emitter Voltage VCEO 160 Collector−Base Voltage VCB 160 Emitter−Base Voltage VEB 7.. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MJE4350 |
INCHANGE |
PNP Transistor |
|
| 2 | MJE4350 |
SavantIC |
(MJE4350 - MJE4353) SILICON POWER TRANSISTOR |
|
| 3 | MJE4351 |
SavantIC |
(MJE4350 - MJE4353) SILICON POWER TRANSISTOR |
|
| 4 | MJE4351 |
INCHANGE |
PNP Transistor |
|
| 5 | MJE4352 |
Motorola |
16 AMPERE POWER TRANSISTORS |
|
| 6 | MJE4352 |
SavantIC |
(MJE4350 - MJE4353) SILICON POWER TRANSISTOR |
|
| 7 | MJE4352 |
INCHANGE |
PNP Transistor |
|
| 8 | MJE4340 |
SavantIC |
(MJE4340 - MJE4343) SILICON POWER TRANSISTOR |
|
| 9 | MJE4340 |
INCHANGE |
NPN Transistor |
|
| 10 | MJE4341 |
SavantIC |
(MJE4340 - MJE4343) SILICON POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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