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| Part Number | MJE2360T |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | MJE2360T |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 350 V(Min) ·DC Current Gain- : hFE = 25(Min) @ IC= 50mA ·Low Collector Saturation Voltage- : VCE(sat) = 1.5V(Max.)@ IC= 100mA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low power. |
| Features | i.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 2.5mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 100mA ;IB=10mA VBE(on) Base-Emitter On Voltage IC= 100mA; VCE= 10V ICEO Collector Cutoff Current VCE= . |
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