MJE13009 Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

MJE13009 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR


MJE13009
Part Number MJE13009
Distributor Stock Price Buy
TGS
MJE13009
Part Number MJE13009
Manufacturer TGS
Title NPN Silicon Power Transistors
Description These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE such as Switching Regulator’s, Inverters, Motor Controls,applications Solenoid/Relay drivers and Deflection circuits. O A.
Features , IC=8.0A IC=8.0A,IB=1.6A IC=12.0A,IB=3.0A Base-Emitter Saturation Voltage Current Gain Bandwidth Product Storage Time Min. — — 400 8 6 — — — 4 — Typ. — — — — — — — — — 3.5 Max. 1.0 1.0 — 40 30 1.5 3.0 1.6 — 4 V MHz us V Unit mA mA V O ICEO IEBO VCEO hFE(1) hFE(2) Collector-Emitter Saturation Voltage VCE(sat) VBE(sat) IC=8.0A,IB=1.6A fT TS VCE=10V,IC=500mA IB1=IB2=1.6A tp=25us Free Datasheet.
KEC
MJE13009
Part Number MJE13009
Manufacturer KEC
Title TRIPLE DIFFUSED NPN TRANSISTOR
Description SEMICONDUCTOR TECHNICAL DATA SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES Excellent Switching Times : ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=8A High Collector Voltage : VCBO=700V. MJE13009 TRIPLE DIFFUSED NPN TRANSISTOR MAXIM.
Features Excellent Switching Times : ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=8A High Collector Voltage : VCBO=700V. MJE13009 TRIPLE DIFFUSED NPN TRANSISTOR MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage DC Collector Current Pulse Base Current Collector Power Dissipation (Tc=25 ) ) SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING 700 400 9 12 A .
UTC
MJE13009
Part Number MJE13009
Manufacturer UTC
Title SWITCHMODE SERIES NPN SWITCHMODE SERIES NPN TRANSISTORS
Description The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits.  FEAT.
Features * VCEO 400V and 300V * Reverse Bias SOA with Inductive Loads @ TC = 100°C * Inductive Switching Matrix 3 ~ 12 Amp, 25 and 100°C tC @ 8A, 100°C is 120 ns (Typ.). *700 V Blocking Capability *SOA and Switching Applications Information.  ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13009L-TA3-T MJE13009G-TA3-T MJE13009L-TF3-T MJE13009G-TF3-T MJE13009L-T3P-T MJE13009G-T3P.
TAITRON
MJE13009
Part Number MJE13009
Manufacturer TAITRON
Title NPN Power Transistor
Description NPN Power Transistor MJE13009 NPN Power Transistor Features  The TCI MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications  RoHS Compliant TO-220 Mechanical Data Cas.
Features
 The TCI MJE13009 is designed for high
  –voltage, high
  –speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications
 RoHS Compliant TO-220 Mechanical Data Case: Terminals: Weight: TO-220, Plastic Package Solderable per MIL-STD-202, Method 208 0.08 ounces, 2.24 grams Absolute Maximum Ratings (Tamb=25°C unless otherwi.
Motorola
MJE13009
Part Number MJE13009
Manufacturer Motorola
Title 12 AMPERE NPN SILICON POWER TRANSISTOR
Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE13009/D MJE13009* Designer's SWITCHMODE Series NPN Silicon Power Transistors The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 .
Features
• VCEO(sus) 400 V and 300 V
• Reverse Bias SOA with Inductive Loads @ TC = 100_C
• Inductive Switching Matrix 3 to 12 Amp, 25 and 100_C . . . tc @ 8 A, 100_C is 120 ns (Typ).
• 700 V Blocking Capability
• SOA and Switching Applications Information. ™ Data Sheet *Motorola Preferred Device 12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 100 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ.
Inchange Semiconductor
MJE13009
Part Number MJE13009
Manufacturer Inchange Semiconductor
Title Silicon NPN Power Transistors
Description ¡¤With TO-220C package ¡¤High voltage ,high speed APPLICATIONS ¡¤Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DE.
Features ALUE 1.25 UNIT ¡æ/W Free Datasheet http://www.datasheet4u.com/ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter satu.
ON Semiconductor
MJE13009
Part Number MJE13009
Manufacturer ON Semiconductor
Title NPN Silicon Power Transistors
Description MJE13009 Preferred Device SWITCHMODEt Series NPN Silicon Power Transistors The MJE13009 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inver.
Features http://onsemi.com
• VCEO(sus) 400 V and 300 V
• Reverse Bias SOA with Inductive Loads @ TC = 100_C
• Inductive Switching Matrix 3 to 12 Amp, 25 and 100_C tc @ 8 A,
• 700 V Blocking Capability
• SOA and Switching Applications Information
• Pb−Free Package is Available* MAXIMUM RATINGS Rating Collector−Emitter Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current Base Current Emi.
Central Semiconductor
MJE13009
Part Number MJE13009
Manufacturer Central Semiconductor
Title SILICON NPN TRANSISTORS
Description The CENTRAL SEMICONDUCTOR MJE13008 and MJE13009 are silicon NPN transistors designed for high voltage, high speed switching applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector .
Features .
Fairchild Semiconductor
MJE13009
Part Number MJE13009
Manufacturer Fairchild Semiconductor
Title NPN Silicon Transisor
Description MJE13008/13009 MJE13008/13009 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control 1 TO-220 1.Base 2.Collector 3.Emitter NPN Silicon Transisor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO Collector-.
Features .

similar datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 MJE13001
Unisonic Technologies
NPN Epitaxial Silicon Transistor Datasheet
2 MJE13001
MCC
NPN Silicon Plastic-Encapsulate Transistor Datasheet
3 MJE13001-P
UTC
NPN SILICON POWER TRANSISTOR Datasheet
4 MJE13001-Q
Unisonic Technologies
NPN SILICON TRANSISTOR Datasheet
5 MJE13001A0
BLUE ROCKET ELECTRONICS
Silicon NPN transistor Datasheet
6 MJE13001A1
BLUE ROCKET ELECTRONICS
Silicon NPN transistor Datasheet
7 MJE13001A2
BLUE ROCKET ELECTRONICS
Silicon NPN transistor Datasheet
8 MJE13001AL
Forward Holdings
NPN Triple Diffused Silicon Transistor Datasheet
9 MJE13001AT
BLUE ROCKET ELECTRONICS
Silicon NPN transistor Datasheet
10 MJE13001B1
BLUE ROCKET ELECTRONICS
Silicon NPN transistor Datasheet
More datasheet from ST Microelectronics
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad