Part Number | MJE13009 |
Distributor | Stock | Price | Buy |
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Part Number | MJE13009 |
Manufacturer | TGS |
Title | NPN Silicon Power Transistors |
Description | These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE such as Switching Regulator’s, Inverters, Motor Controls,applications Solenoid/Relay drivers and Deflection circuits. O A. |
Features | , IC=8.0A IC=8.0A,IB=1.6A IC=12.0A,IB=3.0A Base-Emitter Saturation Voltage Current Gain Bandwidth Product Storage Time Min. — — 400 8 6 — — — 4 — Typ. — — — — — — — — — 3.5 Max. 1.0 1.0 — 40 30 1.5 3.0 1.6 — 4 V MHz us V Unit mA mA V O ICEO IEBO VCEO hFE(1) hFE(2) Collector-Emitter Saturation Voltage VCE(sat) VBE(sat) IC=8.0A,IB=1.6A fT TS VCE=10V,IC=500mA IB1=IB2=1.6A tp=25us Free Datasheet. |
Part Number | MJE13009 |
Manufacturer | KEC |
Title | TRIPLE DIFFUSED NPN TRANSISTOR |
Description | SEMICONDUCTOR TECHNICAL DATA SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES Excellent Switching Times : ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=8A High Collector Voltage : VCBO=700V. MJE13009 TRIPLE DIFFUSED NPN TRANSISTOR MAXIM. |
Features | Excellent Switching Times : ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=8A High Collector Voltage : VCBO=700V. MJE13009 TRIPLE DIFFUSED NPN TRANSISTOR MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage DC Collector Current Pulse Base Current Collector Power Dissipation (Tc=25 ) ) SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING 700 400 9 12 A . |
Part Number | MJE13009 |
Manufacturer | UTC |
Title | SWITCHMODE SERIES NPN SWITCHMODE SERIES NPN TRANSISTORS |
Description | The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. FEAT. |
Features | * VCEO 400V and 300V * Reverse Bias SOA with Inductive Loads @ TC = 100°C * Inductive Switching Matrix 3 ~ 12 Amp, 25 and 100°C tC @ 8A, 100°C is 120 ns (Typ.). *700 V Blocking Capability *SOA and Switching Applications Information. ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13009L-TA3-T MJE13009G-TA3-T MJE13009L-TF3-T MJE13009G-TF3-T MJE13009L-T3P-T MJE13009G-T3P. |
Part Number | MJE13009 |
Manufacturer | TAITRON |
Title | NPN Power Transistor |
Description | NPN Power Transistor MJE13009 NPN Power Transistor Features The TCI MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications RoHS Compliant TO-220 Mechanical Data Cas. |
Features |
The TCI MJE13009 is designed for high –voltage, high –speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications RoHS Compliant TO-220 Mechanical Data Case: Terminals: Weight: TO-220, Plastic Package Solderable per MIL-STD-202, Method 208 0.08 ounces, 2.24 grams Absolute Maximum Ratings (Tamb=25°C unless otherwi. |
Part Number | MJE13009 |
Manufacturer | Motorola |
Title | 12 AMPERE NPN SILICON POWER TRANSISTOR |
Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE13009/D MJE13009* Designer's SWITCHMODE Series NPN Silicon Power Transistors The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 . |
Features |
• VCEO(sus) 400 V and 300 V • Reverse Bias SOA with Inductive Loads @ TC = 100_C • Inductive Switching Matrix 3 to 12 Amp, 25 and 100_C . . . tc @ 8 A, 100_C is 120 ns (Typ). • 700 V Blocking Capability • SOA and Switching Applications Information. ™ Data Sheet *Motorola Preferred Device 12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 100 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ. |
Part Number | MJE13009 |
Manufacturer | Inchange Semiconductor |
Title | Silicon NPN Power Transistors |
Description | ¡¤With TO-220C package ¡¤High voltage ,high speed APPLICATIONS ¡¤Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DE. |
Features | ALUE 1.25 UNIT ¡æ/W Free Datasheet http://www.datasheet4u.com/ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter satu. |
Part Number | MJE13009 |
Manufacturer | ON Semiconductor |
Title | NPN Silicon Power Transistors |
Description | MJE13009 Preferred Device SWITCHMODEt Series NPN Silicon Power Transistors The MJE13009 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inver. |
Features |
http://onsemi.com
• VCEO(sus) 400 V and 300 V • Reverse Bias SOA with Inductive Loads @ TC = 100_C • Inductive Switching Matrix 3 to 12 Amp, 25 and 100_C tc @ 8 A, • 700 V Blocking Capability • SOA and Switching Applications Information • Pb−Free Package is Available* MAXIMUM RATINGS Rating Collector−Emitter Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current Base Current Emi. |
Part Number | MJE13009 |
Manufacturer | Central Semiconductor |
Title | SILICON NPN TRANSISTORS |
Description | The CENTRAL SEMICONDUCTOR MJE13008 and MJE13009 are silicon NPN transistors designed for high voltage, high speed switching applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector . |
Features | . |
Part Number | MJE13009 |
Manufacturer | Fairchild Semiconductor |
Title | NPN Silicon Transisor |
Description | MJE13008/13009 MJE13008/13009 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control 1 TO-220 1.Base 2.Collector 3.Emitter NPN Silicon Transisor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO Collector-. |
Features | . |
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