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| Part Number | MJE13005 |
| Distributor | Stock | Price | Buy |
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| Part Number | MJE13005 |
| Manufacturer | ON |
| Title | NPN SILICON POWER TRANSISTOR |
| Description | www.DataSheet4U.com MJE13005 Preferred Device SWITCHMODEt Series NPN Silicon Power Transistors These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Swit. |
| Features |
http://onsemi.com
• VCEO(sus) 400 V • Reverse Bias SOA with Inductive Loads @ TC = 100_C • Inductive Switching Matrix 2 to 4 A, 25 and 100_C tc @ 3A, • 700 V Blocking Capability • SOA and Switching Applications Information • Pb−Free Package is Available* MAXIMUM RATINGS Rating Collector−Emitter Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current Base Current Emitter Current −. |
| Part Number | MJE13005 |
| Manufacturer | UTC |
| Title | NPN SILICON POWER TRANSISTORS |
| Description | These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 400 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inductive switching matrix 2 to 4. |
| Features | * VCEO(SUS)= 400 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inductive switching matrix 2 to 4 Amp, 25 and 100°С tC @ 3A, 100°С is 180 ns (Typ) * 700V blocking capability * SOA and switching applications information APPLICATIONS * Switching regulator’s, inverters * Motor controls * Solenoid/Relay drivers * Deflection circuits ORDERING INFORMATION Ordering Number Lead Free H. |
| Part Number | MJE13005 |
| Manufacturer | CENTRAL SEMICONDUCTOR |
| Title | NPN SILICON POWER TRANSISTOR |
| Description | The CENTRAL SEMICONDUCTOR MJE13005 is a Silicon NPN Power Transistor, designed for high speed power switching applications. MAXIMUM RATINGS (TC=25°C unless otherwise noted) SYMBOL Collector-Emitter Voltage VCEO Collector-Emitter Voltage VCEV Emitter-Base Voltage VEBO Collector Current IC . |
| Features | C=10mA IC=1.0A, IB=0.2A IC=2.0A, IB=0.5A IC=4.0A, IB=1.0A IC=1.0A, IB=0.2A IC=2.0A, IB=0.5A VCE=5.0V, IC=1.0A VCE=5.0V, IC=2.0A 400 10 8.0 MAX 1.0 5.0 1.0 0.5 0.6 1.0 1.2 1.6 60 40 UNITS mA mA mA V V V V V V (Continued) R1 MJE13005 ELECTRICAL CHARACTERISTICS (CONTINUED) SYMBOL TEST CONDITIONS fT VCE=10V, IC=500mA, f=1.0MHz Cob VCB=10V, IE=0, f=100kHz Resistive Load td VCC=125V, IC=2.0A, . |
| Part Number | MJE13005 |
| Manufacturer | CDIL |
| Title | NPN PLASTIC POWER TRANSISTORS |
| Description | Collector Emitter Sustaining Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous *Peak Base Current Continuous *Peak Emitter Current Continuous *Peak Power Dissipation upto Ta=25ºC Derate above=25ºC Power Dissipation upto Tc=25ºC Derate above=25ºC Operating And Storag. |
| Features | . |
| Part Number | MJE13005 |
| Manufacturer | Motorola |
| Title | 4 AMPERE NPN SILICON POWER TRANSISTOR |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE13005/D MJE13005* Designer's SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 11. |
| Features |
• VCEO(sus) 400 V • Reverse Bias SOA with Inductive Loads @ TC = 100_C • Inductive Switching Matrix 2 to 4 Amp, 25 and 100_C . . . tc @ 3A, 100_C is 180 ns (Typ) • 700 V Blocking Capability • SOA and Switching Applications Information. ™ Data Sheet *Motorola Preferred Device 4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 75 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ. |
| Part Number | MJE13005 |
| Manufacturer | Central Semiconductor |
| Title | NPN SILICON POWER TRANSISTOR |
| Description | The CENTRAL SEMICONDUCTOR MJE13004 and MJE13005 are Silicon NPN Power Transistors, designed for high speed power switching applications. MAXIMUM RATINGS (TC=25°C unless otherwise noted) SYMBOL MJE13004 Collector-Emitter Voltage VCEO 300 Collector-Emitter Voltage VCEV 600 Emitter-Base Volta. |
| Features | E13004) VCE=700V, VBE(OFF)=1.5V (MJE13005) VCE=700V, VBE(OFF)=1.5V, TC=100°C (MJE13005) VEB=9.0V IC=10mA (MJE13004) IC=10mA (MJE13005) IC=1.0A, IB=0.2A IC=2.0A, IB=0.5A IC=4.0A, IB=1.0A IC=2.0A, IB=0.5A, TC=100°C IC=1.0A, IB=0.2A IC=2.0A, IB=0.5A IC=2.0A, IB=0.5A, TC=100°C VCE=5.0V, IC=1.0A VCE=5.0V, IC=2.0A 300 400 10 8.0 1.0 5.0 1.0 5.0 1.0 0.5 0.6 1.0 1.0 1.2 1.6 1.5 60 40 UNITS V V V A A A . |
| Part Number | MJE13005 |
| Manufacturer | KEC |
| Title | TRIPLE DIFFUSED NPN TRANSISTOR |
| Description | SEMICONDUCTOR TECHNICAL DATA SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FLUORESCENT LIGHT BALLASTOR APPLICATION. FEATURES Excellent Switching Times : ton=0.8 S(Max.), tf=0.9 S(Max.), at IC=2A High Collector Voltage : VCBO=700V. MJE13. |
| Features | Excellent Switching Times : ton=0.8 S(Max.), tf=0.9 S(Max.), at IC=2A High Collector Voltage : VCBO=700V. MJE13005 TRIPLE DIFFUSED NPN TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature VCBO VCEO VEBO IC ICP IB PC T. |
| Part Number | MJE13005 |
| Manufacturer | Fairchild Semiconductor |
| Title | NPN Silicon Transistor |
| Description | MJE13004/13005 MJE13004/13005 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control 1 TO-220 2.Collector 3.Emitter 1.Base NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Bas. |
| Features | C = 2A, IB = 0.5A IC = 4A, IB = 1A IC = 1A, IB = 0.2A IC = 2A, IB = 0.5A VCB = 10V, f = 0.1MHz VCE = 10V, IC = 0.5A VCC = 125V, IC = 2A IB1 = - IB2 = 0.4A RL = 62.5Ω 4 0.8 4 0.9 65 10 8 Min. 300 400 1 60 40 0.5 0.6 1 1.2 1.6 V V V V V pF MHz µs µs µs Typ. Max. Units V V mA IEBO hFE VCE(sat) VBE (sat) Cob fT tON tSTG tF *Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth P. |
| Part Number | MJE13005 |
| Manufacturer | Comset Semiconductors |
| Title | SILICON POWER TRANSISTOR |
| Description | SEMICONDUCTORS MJE13005 SILICON POWER TRANSISTORS NPN power transistors in a TO-220 package. They are intended for high voltage, high speed power switching inductive circuits where fall time is critical. They are particularly suited for 115V and 220V SWITCHMODE applications such as switching regula. |
| Features | l RthJC RthJA Ratings From Junction to Case Thermal Resistance From Junction to Free-Air Thermal Resistance Value 1.67 62.5 Unit °C/W 02/10/2012 COMSET SEMICONDUCTORS 1/3 datasheet pdf - http://www.DataSheet4U.net/ SEMICONDUCTORS MJE13005 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO ICBO Ratings Collector-Emitter Sustaining Voltage (*) Collector- Cutoff Current . |
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