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| Part Number | MJE13002 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | MJE13002 |
| Manufacturer | Motorola |
| Title | 1.5 AMPERE NPN SILICON POWER TRANSISTORS |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE13002/D Designer's SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 . |
| Features |
• Reverse Biased SOA with Inductive Loads @ TC = 100_C • Inductive Switching Matrix 0.5 to 1.5 Amp, 25 and 100_C . . . tc @ 1 A, 100_C is 290 ns (Typ). • 700 V Blocking Capability • SOA and Switching Applications Information. ™ Data Sheet MJE13002 * MJE13003 * *Motorola Preferred Device 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ. |
| Part Number | MJE13002 |
| Manufacturer | SEMTECH |
| Title | NPN Silicon Power Transistors |
| Description | MJE13002 / MJE13003 NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls, S. |
| Features |
• Reverse Biased SOA with Inductive Loads TC=100oC • Inductive Switching Matrix 0.5 to 1.5 Amp,25 and 100oC • tc @ 1A, 100oC is 290 ns (Typ). • 700V Blocking Capability • SOA and Switching Applications Information. Absolute Maximum Ratings (T a=25oC) TO-225AA Package Symbol Value MJE13002 MJE13003 Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current - Con. |
| Part Number | MJE13002 |
| Manufacturer | MCC |
| Title | NPN Silicon Plastic-Encapsulate Transistor |
| Description | MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# MJE13002 • • • • • • • Features Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy m. |
| Features | Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Capable of 1.25Watts of Power Dissipation. Collector-current 1.0A Collector-base Voltage 600V Operating and storage junction temperature range: -55OC to +150 OC NPN Silicon Plastic-Encapsulate Transistor A K N Elect. |
| Part Number | MJE13002 |
| Manufacturer | UTC |
| Title | NPN SILICON POWER TRANSISTOR |
| Description | The UTC MJE13002 designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulator’s,inverters, DC-DC converter, Motor control, Solenoid/Relay drivers and deflection circuits. FEATURES . |
| Features | *Collector-Emitter Sustaining Voltage: VCEO (sus)=300V. *Collector-Emitter Saturation Voltage: VCE(sat)=1.0V(Max.) @IC=1.0A, IB =0.25A *Switch Time- tf =0.7μs(Max.) @IC=1.0A. ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13002L-x-T92-B MJE13002G-x-T92-B MJE13002L-x-T92-K MJE13002G-x-T92-K MJE13002L-x-T92-A-B MJE13002G-x-T92-A-B MJE13002L-x-T92-A-K MJE13002G-x-T92-A-K . |
| Part Number | MJE13002 |
| Manufacturer | SavantIC |
| Title | Silicon NPN Power Transistors |
| Description | ·With TO-126 package ·High voltage ,high speed APPLICATIONS ·Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting ba. |
| Features | X 3.12 UNIT /W SavantIC Semiconductor Silicon NPN Power Transistors Product Specification MJE13002 CHARACTERISTICS Tj=25 unles otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=10mA ;IB=0 300 V VCE(sat)-1 VCE(sat)-2 VCE(sat)-3 Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter sa. |
| Part Number | MJE13002 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistors |
| Description | ¡¤With TO-126 package ¡¤High voltage ,high speed APPLICATIONS ¡¤Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DE. |
| Features | 3.12 UNIT ¡æ/W Free Datasheet http://www.datasheet4u.com/ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25¡æ unles otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation. |
| Part Number | MJE13002 |
| Manufacturer | CDIL |
| Title | (MJE13002 / MJE13003) NPN EPITAXIAL SILICON POWER TRANSISTORS |
| Description | Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Peak Base Current Continuous Peak Emitter Current Continuous Peak Total Power Dissipation @ Ta=25ºC Derate Above 25ºC Total Power Dissipation @ TC=25ºC Derate Above 25ºC Operating And Storage Juncti. |
| Features | **VCEO(sus) IC=10mA, IB=0 MJE13002 MJE13003 VCEV=Rated Value, VBE(off)=1.5V VCEV=Rated Value, VBE(off)=1.5V,Tc=100ºC VEB=9V, IC=0 SYMBOL VCEO(sus) VCEV VEBO IC *ICM IB *IBM IE *IEM PD PD Tj, Tstg MJE13002 300 600 9.0 1.5 3.0 0.75 1.5 2.25 4.5 1.4 11.2 40 320 - 65 to 150 MJE13003 400 700 UNIT V V V A A A A A A W mW/ ºC W mW/ ºC ºC MIN 300 400 TYP MAX UNIT V V Collector Cuttoff Current ICEV . |
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Desde 2024. D4U Semiconductor.
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