Busque con el número de pieza junto con el fabricante o la descripción
MF30H100CT |
Click to view a larger image
| Part Number | MF30H100CT |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | www.vishay.com MB30H100CT, MF30H100CT Vishay General Semiconductor Dual Common Cathode High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance ITO-220AB 123 MF30H100CT PIN 1 PIN 2 PIN 3 D2PAK (TO-263AB) K 2 1 MB30H100CT PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS IF(AV) 2 x 15 A VRRM 100 V IFS. |
| Features |
• Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability Available • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for D2PAK (TO-263AB) package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for ITO-220AB package) • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplie. |
| Datasheet |
 MF30H100CT Data Sheet
PDF 88.52KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MF3009 |
ISOCOM |
GaAs infrared emitting diode |
|
| 2 | MF3010 |
ISOCOM |
GaAs infrared emitting diode |
|
| 3 | MF3011 |
ISOCOM |
GaAs infrared emitting diode |
|
| 4 | MF3012 |
ISOCOM |
GaAs infrared emitting diode |
|
| 5 | MF3020 |
ISOCOM |
GaAs infrared emitting diode |
|
| 6 | MF3021 |
ISOCOM |
GaAs infrared emitting diode |
|
| 7 | MF3022 |
ISOCOM |
GaAs infrared emitting diode |
|
| 8 | MF3023 |
ISOCOM |
GaAs infrared emitting diode |
|
| 9 | MF3024 |
ISOCOM |
GaAs infrared emitting diode |
|
| 10 | MF3030 |
ISOCOM |
Optocouplers |
|
Desde 2024. D4U Semiconductor.
|