Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
MCR100-8 |
| Part Number | MCR100-8 |
| Manufacturer | Transys |
| Title | TO-92 Plastic-Encapsulated Transistors |
| Description | Transys Electronics LIMITED TO-92 Plastic-Encapsulated Transistors MCR 100- 6, - 8 Silicon Planar PNPN Thyristor TO-92 1. KATHODE FEATURES 2. GATE Current-IGT: ITRMS: VDRM: 200 0.8 MCR100-6: MCR100-8: µA A 400 V 600 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ . |
| Features | 2. GATE Current-IGT: ITRMS: VDRM: 200 0.8 MCR100-6: MCR100-8: µA A 400 V 600 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 3. ANODE ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) 123 Parameter Symbol Test conditions MIN MAX On state voltage * VTM ITM=1A 1.7 Gate trigger voltage Peak Repetitive forward and reverse blocking voltage MCR1. |
MCR100-8 |
| Part Number | MCR100-8 |
| Manufacturer | CDIL |
| Title | SENSITIVE GATE SILICON CONTROLLED RECTIFIERS |
| Description | SYMBOL Peak Repetitive Off State Voltage *VDRM (Tj= - 40 to 110ºC, Sine Wave, 50 to 60Hz; Gate Open) *VRRM MCR100-3 MCR100-4 MCR100-6 MCR100-8 On State RMS Current Conduction Angles (TC=80ºC) 180º IT(RMS) Peak Non Repetitive Surge Current (1/2 Cycle, Sine Wave, 60Hz, TJ=25ºC) Circuit Fu. |
| Features | . |
MCR100-8 |
| Part Number | MCR100-8 |
| Manufacturer | LITE-ON |
| Title | Sillicon Controlled Rectifiers |
| Description | LITE-ON SEMICONDUCTOR Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors FEATURES Sensitive Gate Allows Triggering by Microcontrollers and Other logic Circuits Blocking Voltage to 600 Volts On–State Current Rating of 0.25 Amperes RMS at 80℃ High Surge Current Capability — 9 Am. |
| Features |
Sensitive Gate Allows Triggering by Microcontrollers and Other logic Circuits Blocking Voltage to 600 Volts On –State Current Rating of 0.25 Amperes RMS at 80℃ High Surge Current Capability — 9 Amperes Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design Immunity to dV/dt — 20 V/us Minimum at Tj=110℃ Glass-Passivated Surface for Reliability and Uniformity Autoclave test meets . |
MCR100-8 |
| Part Number | MCR100-8 |
| Manufacturer | ON Semiconductor |
| Title | Sensitive Gate Silicon Controlled Rectifiers |
| Description | MCR100 Series Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in a. |
| Features |
http://onsemi.com
SCRs 0.8 A RMS 100 thru 600 V
G A K
• Sensitive Gate Allows Triggering by Microcontrollers and Other • • • • • • • Logic Circuits Blocking Voltage to 600 V On−State Current Rating of 0.8 A RMS at 80°C High Surge Current Capability − 10 A Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design Immunity to dV/dt − 20 V/msec Minimum at 110°C Glass-Passivated Sur. |
MCR100-8 |
| Part Number | MCR100-8 |
| Manufacturer | SemiHow |
| Title | Silicon Controlled Rectifier |
| Description | Semihow’s SCR product is a single directional PNPN device, has a low gate trigger current and high stability in gate trigger current to temperature, generally suitable for sensing and detection circuits. VDRM = 600 V IT(RMS) = 1 A ITSM = 11 A IGT = 200uA Symbol TO-92 K G A Absolute Maximum Ratings. |
| Features |
Repetitive Peak Off-State Voltage: 600V R.M.S On –State Current (IT(RMS) = 1A) Low Gate Trigger Current: 200uA Applications Leakage detector, Electronic Ballast or protection circuit. General Description Semihow’s SCR product is a single directional PNPN device, has a low gate trigger current and high stability in gate trigger current to temperature, generally suitable for sensing and detecti. |
MCR100-8 |
| Part Number | MCR100-8 |
| Manufacturer | Motorola |
| Title | Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCR100/D Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors. |
| Features | rrent RMS (See Figures 1 & 2) (All Conduction Angles) Peak Forward Surge Current, TA = 25°C (1/2 Cycle, Sine Wave, 60 Hz) Circuit Fusing Considerations (t = 8.3 ms) Peak Gate Power — Forward, TA = 25°C Average Gate Power — Forward, TA = 25°C Peak Gate Current — Forward, TA = 25°C (300 µs, 120 PPS) Peak Gate Voltage — Reverse Operating Junction Temperature Range @ Rated VRRM and VDRM Storage Temper. |
MCR100-8 |
| Part Number | MCR100-8 |
| Manufacturer | SemiWell |
| Title | Sensitive Gate Silicon Controlled Rectifiers |
| Description | Sensitive triggering SCR is suitable for the application where gate current limited such as small motor control, gate driver for large SCR, sensing and detecting circuits. Absolute Maximum Ratings Symbol VDRM IT(AV) IT(RMS) ITSM I2 t PGM PG(AV) IFGM VRGM TJ TSTG ( TJ = 25°C unless otherwise specif. |
| Features | Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 0.8 A ) ◆ Low On-State Voltage (1.2V(Typ.)@ ITM) ◆ ▼ 1 23 ○ 3. Anode 1. Cathode TO-92 General Description Sensitive triggering SCR is suitable for the application where gate current limited such as small motor control, gate driver for large SCR, sensing and detecting circuits. Absolute Maximum Ratings Symbol VDRM I. |
MCR100-8 |
| Part Number | MCR100-8 |
| Manufacturer | HAOPIN |
| Title | SCRs |
| Description | Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. Symbol Sim. |
| Features | Blocking voltage to 600 V On-state RMS current to 0.8 A Ultra low gate trigger current SYMBOL V DRM PARAMETER Repetitive peak off-state voltages RMS on-state current full sine wave Value 600 0.8 10 Unit V A A IT RMS I TSM Non-repetitive peak on-state current (full cycle,Tj initial=25 ) SYMBOL R R JC JA PARAMETER Thermal resistance,Junction to Case Junction to Ambient CONDITIONS MIN - . |
MCR100-8 |
| Part Number | MCR100-8 |
| Manufacturer | Kexin |
| Title | Silicon Controlled Rectifier |
| Description | SMD Type Silicon Controlled Rectifier MCR100 (KCR100) Thyristor ■ Features ● Current-IGT : 200 μA ● ITRMS : 0.8 A. ● VRRM/ VDRM : MCR100-6: 400 V MCR100-6R: 400 V MCR100-8: 600 V MCR100-8R: 600 V ● Operating and storage junction temperature range ● TJ，Tstg : -55℃ to +150℃ 1.70 0.1 0.42 0.1 0.4. |
| Features |
● Current-IGT : 200 μA ● ITRMS : 0.8 A. ● VRRM/ VDRM : MCR100-6: 400 V MCR100-6R: 400 V MCR100-8: 600 V MCR100-8R: 600 V ● Operating and storage junction temperature range ● TJ，Tstg : -55℃ to +150℃ 1.70 0.1 0.42 0.1 0.46 0.1 ■ Electrical Characteristics Ta = 25℃ Parameter On State Voltage (Note.1) Gate Trigger Voltage Peak Repetitive forward and MCR100-6/6R rever seblocking voltage MCR. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MCR100-3 |
Motorola |
Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) |
|
| 2 | MCR100-3 |
Semtech |
SCR |
|
| 3 | MCR100-3 |
ON Semiconductor |
Sensitive Gate Silicon Controlled Rectifiers |
|
| 4 | MCR100-3 |
Taiwan Semiconductor |
Small Signal Diode |
|
| 5 | MCR100-3 |
CDIL |
SENSITIVE GATE SILICON CONTROLLED RECTIFIERS |
|
| 6 | MCR100-3 |
TRANSYS |
Silicon Controlled Rectifier |
|
| 7 | MCR100-3 |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS |
|
| 8 | MCR100-3 |
BLUE ROCKET ELECTRONICS |
Thyristor |
|
| 9 | MCR100-4 |
Motorola |
Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) |
|
| 10 | MCR100-4 |
Semtech |
SCR |
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Desde 2024. D4U Semiconductor.
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