Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
MCR100-6 |
| Part Number | MCR100-6 |
| Manufacturer | Transys |
| Title | TO-92 Plastic-Encapsulated Transistors |
| Description | Transys Electronics LIMITED TO-92 Plastic-Encapsulated Transistors MCR 100- 6, - 8 Silicon Planar PNPN Thyristor TO-92 1. KATHODE FEATURES 2. GATE Current-IGT: ITRMS: VDRM: 200 0.8 MCR100-6: MCR100-8: µA A 400 V 600 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ . |
| Features | 2. GATE Current-IGT: ITRMS: VDRM: 200 0.8 MCR100-6: MCR100-8: µA A 400 V 600 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 3. ANODE ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) 123 Parameter Symbol Test conditions MIN MAX On state voltage * VTM ITM=1A 1.7 Gate trigger voltage Peak Repetitive forward and reverse blocking voltage MCR1. |
MCR100-6 |
| Part Number | MCR100-6 |
| Manufacturer | Motorola |
| Title | Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCR100/D Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors. |
| Features | rrent RMS (See Figures 1 & 2) (All Conduction Angles) Peak Forward Surge Current, TA = 25°C (1/2 Cycle, Sine Wave, 60 Hz) Circuit Fusing Considerations (t = 8.3 ms) Peak Gate Power — Forward, TA = 25°C Average Gate Power — Forward, TA = 25°C Peak Gate Current — Forward, TA = 25°C (300 µs, 120 PPS) Peak Gate Voltage — Reverse Operating Junction Temperature Range @ Rated VRRM and VDRM Storage Temper. |
MCR100-6 |
| Part Number | MCR100-6 |
| Manufacturer | ON Semiconductor |
| Title | Sensitive Gate Silicon Controlled Rectifiers |
| Description | MCR100 Series Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in a. |
| Features |
http://onsemi.com
SCRs 0.8 A RMS 100 thru 600 V
G A K
• Sensitive Gate Allows Triggering by Microcontrollers and Other • • • • • • • Logic Circuits Blocking Voltage to 600 V On−State Current Rating of 0.8 A RMS at 80°C High Surge Current Capability − 10 A Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design Immunity to dV/dt − 20 V/msec Minimum at 110°C Glass-Passivated Sur. |
MCR100-6 |
| Part Number | MCR100-6 |
| Manufacturer | Inchange Semiconductor |
| Title | Thyristors |
| Description | isc Thyristors FEATURES ·With TO-92 package ·Sensitive gate trigger current ·Low reverse and forward blocking current ·Low holding current ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN VDRM Repetitive p. |
| Features |
·With TO-92 package ·Sensitive gate trigger current ·Low reverse and forward blocking current ·Low holding current ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN VDRM Repetitive peak off-state voltage 400 VRRM Repetitive peak off-state voltage 400 IT(RMS) RMS on-state current(180°conduction angle). |
MCR100-6 |
| Part Number | MCR100-6 |
| Manufacturer | WEJ |
| Title | Silicon Planar PNPN Thyristor |
| Description | . |
| Features | . |
MCR100-6 |
| Part Number | MCR100-6 |
| Manufacturer | CDIL |
| Title | SENSITIVE GATE SILICON CONTROLLED RECTIFIERS |
| Description | SYMBOL Peak Repetitive Off State Voltage *VDRM (Tj= - 40 to 110ºC, Sine Wave, 50 to 60Hz; Gate Open) *VRRM MCR100-3 MCR100-4 MCR100-6 MCR100-8 On State RMS Current Conduction Angles (TC=80ºC) 180º IT(RMS) Peak Non Repetitive Surge Current (1/2 Cycle, Sine Wave, 60Hz, TJ=25ºC) Circuit Fu. |
| Features | . |
MCR100-6 |
| Part Number | MCR100-6 |
| Manufacturer | SemiHow |
| Title | Silicon Controlled Rectifier |
| Description | Semihow’s SCR product is a single directional PNPN device, has a low gate trigger current and high stability in gate trigger current to temperature, generally suitable for sensing and detection circuits. VDRM = 400 V IT(RMS) = 0.8 A ITSM = 11 A IGT = 200uA Symbol TO-92 K G A Absolute Maximum Ratin. |
| Features |
Repetitive Peak Off-State Voltage: 400V R.M.S On –State Current (IT(RMS) = 0.8A) Low Gate Trigger Current: 200uA Applications Leakage detector, Electronic Ballast or protection circuit. General Description Semihow’s SCR product is a single directional PNPN device, has a low gate trigger current and high stability in gate trigger current to temperature, generally suitable for sensing and detec. |
MCR100-6 |
| Part Number | MCR100-6 |
| Manufacturer | Weitron |
| Title | (MCR100-6/-8) Thyristors |
| Description | MCR100-6/MCR100-8 Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors P b Lead(Pb)-Free A SCRs 0.8 A RMS 400/600 Voltage G C 1.Cathode 2.Gate 3.Anode 1 2 3 TO-92 Maximum Ratings (TA=25°C unless otherwise noted) Rating Repetitive Peak Off-stage Voltage Collector-Base Voltag. |
| Features | WE ITR O N http://www.weitron.com.tw 1/2 30-Jan-07 Free Datasheet http://www.datasheet4u.com/ MCR100-6/MCR100-8 TO-92 Outline Dimensions E unit:mm C J K G Dim A B C D E G H J K L H TO-92 Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50 B L WEITRON http://www.weitron.com.tw D A 2/2 30-Jan-07 Free Datasheet http://www.datash. |
MCR100-6 |
| Part Number | MCR100-6 |
| Manufacturer | Taiwan Semiconductor |
| Title | Small Signal Diode |
| Description | MCR100-3/MCR100-4/MCR100-5/MCR100-6/MCR100-7/MCR100-8 Thyristors Small Signal Diode DO-92 A B G E F Features Epitaxial planar die construction Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant . |
| Features | Epitaxial planar die construction Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with C suffix "G" on packing code and prefix "G" on date code Mechanical Data : TO-92 plastic package Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 20. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MCR100-3 |
Motorola |
Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) |
|
| 2 | MCR100-3 |
Semtech |
SCR |
|
| 3 | MCR100-3 |
ON Semiconductor |
Sensitive Gate Silicon Controlled Rectifiers |
|
| 4 | MCR100-3 |
Taiwan Semiconductor |
Small Signal Diode |
|
| 5 | MCR100-3 |
CDIL |
SENSITIVE GATE SILICON CONTROLLED RECTIFIERS |
|
| 6 | MCR100-3 |
TRANSYS |
Silicon Controlled Rectifier |
|
| 7 | MCR100-3 |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS |
|
| 8 | MCR100-3 |
BLUE ROCKET ELECTRONICS |
Thyristor |
|
| 9 | MCR100-4 |
Motorola |
Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) |
|
| 10 | MCR100-4 |
Semtech |
SCR |
|
Desde 2024. D4U Semiconductor.
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