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| Part Number | MBR330 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | MBR330 |
| Manufacturer | EIC |
| Title | SCHOTTKY BARRIER RECTIFIER DIODES |
| Description | www.eicsemi.com MBR320 ~ MBR340 PRV : 20 - 40 Volts IO : 3.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * High efficiency * Low power loss * Low forward voltage drop * Pb / RoHS Free MECHANICAL DATA : * Case : DO-201AD Molded plastic * Epoxy : UL. |
| Features | : * High current capability * High surge current capability * High reliability * High efficiency * Low power loss * Low forward voltage drop * Pb / RoHS Free MECHANICAL DATA : * Case : DO-201AD Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 1. |
| Part Number | MBR330 |
| Manufacturer | Kexin |
| Title | Schottky Barrier Rectifier |
| Description | DIP Type Schottky Barrier Rectifier MBR320 ~ MBR3100 TransDisiotodress Ƶ Features ƽ Metal silicon junction, majority carrier conduction ƽ Low power loss, high efficiency ƽ High forward surge current capability DO-201AD 0.210 (5.3) 0.190 (4.8) DIA. 1.0 (25.4) MIN. 0.375 (9.5) 0.285 (7.2) 0.052. |
| Features | ƽ Metal silicon junction, majority carrier conduction ƽ Low power loss, high efficiency ƽ High forward surge current capability DO-201AD 0.210 (5.3) 0.190 (4.8) DIA. 1.0 (25.4) MIN. 0.375 (9.5) 0.285 (7.2) 0.052 (1.32) 0.048 (1.22) DIA. 1.0 (25.4) MIN. Dimensions in inches and (millimeters) Ƶ Absolute Maximum Ratings and Electrical Characteristics Ratings at 25 C ambient temperature unless . |
| Part Number | MBR330 |
| Manufacturer | Motorola |
| Title | Axial Lead Rectifiers |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBR320/D Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Idea. |
| Features |
epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low –voltage, high –frequency inverters, free wheeling diodes, and polarity protection diodes. • • • • Extremely Low vF Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction Low Stored Charge, Majority Carrier Conduction MBR320 MBR330 MBR340 MBR350 MBR360 MBR340 and MBR3. |
| Part Number | MBR330 |
| Manufacturer | Sunmate |
| Title | AXIAL LEADED SCHOTTKY BARRIER RECTIFIER |
| Description | MBR320-MBR3100 AXIAL LEADED SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE: 20 - 100V CURRENT: 3.0 A Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability ! Low Power Loss, High Efficiency ! High Surge Current Capability AB ! For Use in L. |
| Features | ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability ! Low Power Loss, High Efficiency ! High Surge Current Capability AB ! For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Prote ction A pplications . |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MBR330M |
Motorola |
SCHOTTKY BARRIER RECTIFIERS |
|
| 2 | MBR330NG |
American First Semiconductor |
3.0A Leaded Type Schottky Barrier Rectifiers |
|
| 3 | MBR330P |
Motorola |
(MBR3xxP) Axial Lead Rectifiers |
|
| 4 | MBR300100CT |
Micro Commercial Components |
300 Amp Rectifier 20 to 100 Volts Schottky Barrier |
|
| 5 | MBR300100CT |
Naina Semiconductor |
(MBR30045CT - MBR300100CTR) Schottky Power Diode |
|
| 6 | MBR300100CT |
America Semiconductor |
Silicon Power Schottky Diode |
|
| 7 | MBR300100CT |
GeneSiC |
Silicon Power Schottky Diode |
|
| 8 | MBR300100CTR |
Naina Semiconductor |
(MBR30045CT - MBR300100CTR) Schottky Power Diode |
|
| 9 | MBR300100CTR |
America Semiconductor |
Silicon Power Schottky Diode |
|
| 10 | MBR300100CTR |
GeneSiC |
Silicon Power Schottky Diode |
|
Desde 2024. D4U Semiconductor.
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