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MBR20035CT 200 Amp Rectifier 20 to 100 Volts Schottky Barrier


MBR20035CT
Part Number MBR20035CT
Distributor Stock Price Buy
America Semiconductor
MBR20035CT
Part Number MBR20035CT
Manufacturer America Semiconductor
Title Silicon Power Schottky Diode
Description Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ .
Features .
Naina Semiconductor
MBR20035CT
Part Number MBR20035CT
Manufacturer Naina Semiconductor
Title (MBR20020CT - MBR20040CTR) Schottky Power Diode
Description Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR20020CT thru MBR20040CTR Silicon Schottky Diode, 200A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reve.
Features



• Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR20020CT thru MBR20040CTR Silicon Schottky Diode, 200A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol.
GeneSiC
MBR20035CT
Part Number MBR20035CT
Manufacturer GeneSiC
Title Silicon Power Schottky Diode
Description Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 to 40 V VRRM • Not ESD Sensitive MBR20020CT thru MBR20040CTR VRRM = 20 V - 40 V IF(AV) = 200 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter S.
Features
• High Surge Capability
• Types from 20 to 40 V VRRM
• Not ESD Sensitive MBR20020CT thru MBR20040CTR VRRM = 20 V - 40 V IF(AV) = 200 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR20020CT(R) MBR20030CT(R) MBR20035CT(R) MBR20040CT(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC bl.

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