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MBD701 |
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| Part Number | MBD701 |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | www.DataSheet4U.com MBD701, MMBD701LT1 Preferred Device Silicon Hot−Carrier Diodes Schottky Barrier Diodes These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low−cost, high−vol. |
| Features |
http://onsemi.com MARKING DIAGRAMS
TO−92 2−Lead CASE 182 STYLE 1 1 2 2 CATHODE 1 ANODE
• • • • • Extremely Low Minority Carrier Lifetime − 15 ps (Typ) Very Low Capacitance − 1.0 pF @ VR = 20 V High Reverse Voltage − to 70 V Low Reverse Leakage − 200 nA (Max) Pb−Free Packages are Available MBD 701 AYWW G G MAXIMUM RATINGS Rating Reverse Voltage Forward Power Dissipation MBD701 @ TA = 25°C MMBD701LT Derate above 25°C MBD701 MMBD701LT TJ Tstg Symbol VR PF 280 200 2.8 2.0 −55 to +125 −55 to +150 mW mW/°C °C °C Value 70 Unit V 1 2 3 SOT−23 (TO−236) CASE 318 STYLE 6 1 ANODE 5H M G G 1 3 CATH. |
| Datasheet |
 MBD701 Data Sheet
PDF 90.67KB |
| Distributor | Stock | Price | Buy |
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MBD701 |
| Part Number | MBD701 |
| Manufacturer | Motorola |
| Title | CARRIER DETECTOR AND SWITCHING DIODES |
| Description | www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBD701/D Silicon Hot-Carrier Diodes Schottky Barrier Diodes MBD701 MMBD701LT1 Motorola Preferred Devices These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily. |
| Features |
se Voltage Forward Power Dissipation @ TA = 25°C Derate above 25°C Operating Junction Temperature Range Storage Temperature Range Symbol VR PF 280 2.8 TJ – 55 to +125 Tstg – 55 to +150 °C 200 2.0 mW mW/°C °C MMBD701LT1 Value 70 Unit Volts CASE 182 – 02, STYLE 1 (TO –226AC) 2 CATHODE 1 ANODE 3 1 2 DEVICE MARKING MMBD701LT1 = 5H CASE 318 – 08, STYLE 8 SOT – 23 (TO – 236AB) 3 CATHODE 1 ANODE EL. |
MBD701 |
| Part Number | MBD701 |
| Manufacturer | LRC |
| Title | Silicon Hot-Carrier Diodes |
| Description | www.DataSheet4U.com LESHAN RADIO COMPANY, LTD. Silicon Hot –Carrier Diodes These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic pa. |
| Features |
BD701LT1 Value 70 200 2.0
Unit Volts mW mW/°C °C °C
T stg
–55 to +125 –55 to +150 DEVICE MARKING MMBD701LT1 = 5H ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (I R Symbol V (BR)R CT I V V R F F Min 70 — — — — typ — 0.5 9.0 0.42 0.7 Max — 1.0 200 0.5 1.0 Unit Volts pF nAdc Vdc Vdc = 10µAdc) Total Capacitance (V R = 20 V, f = 1.0 . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MBD7000L |
MSV |
Dual Switching Diode |
|
| 2 | MBD770DWT1 |
Leshan Radio Company |
Dual SCHOTTKY Barrier Diodes |
|
| 3 | MBD770DWT1 |
Motorola |
Dual Schottky Barrier Diodes |
|
| 4 | MBD770DWT1 |
ON Semiconductor |
Dual Schottky Barrier Diodes |
|
| 5 | MBD770DWT1G |
ON Semiconductor |
Schottky Barrier Diodes |
|
| 6 | MBD101 |
ON Semiconductor |
Schottky Barrier Diodes |
|
| 7 | MBD101 |
Motorola |
SILICON SCHOTTKY BARRIER DIODES |
|
| 8 | MBD101G |
ON Semiconductor |
Schottky Barrier Diodes |
|
| 9 | MBD101LT1 |
Motorola |
SILICON SCHOTTKY BARRIER DIODES |
|
| 10 | MBD1057-C18 |
Aeroflex |
Planar Back (Tunnel) Diodes |
|
Desde 2024. D4U Semiconductor.
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