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MBD110DWT1 Dual SCHOTTKY Barrier Diodes

MBD110DWT1


MBD110DWT1
Part Number MBD110DWT1
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MBD110DWT1

Motorola
MBD110DWT1
Part Number MBD110DWT1
Manufacturer Motorola
Title Dual Schottky Barrier Diodes
Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBD110DWT1/D Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT–363 package is a solution which simplifies circuit design, reduces device c.
Features s. Readily available to many other fast switching RF and digital applications.
• Extremely Low Minority Carrier Lifetime
• Very Low Capacitance
• Low Reverse Leakage MAXIMUM RATINGS Rating Reverse Voltage MBD110DWT1 MBD330DWT1 MBD770DWT1 Symbol VR Value 7.0 30 70 120
  – 55 to +125
  – 55 to +150 Unit Vdc Forward Power Dissipation TA = 25°C Junction Temperature Storage Temperature Range PF TJ Tstg .

MBD110DWT1

ON Semiconductor
MBD110DWT1
Part Number MBD110DWT1
Manufacturer ON Semiconductor
Title Dual Schottky Barrier Diodes
Description ON Semiconductort Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT–363 package is a solution which simplifies circuit design, reduces device count, and reduces board space by putting two discrete devi.
Features Readily available to many other fast switching RF and digital applications.
• Extremely Low Minority Carrier Lifetime
• Very Low Capacitance
• Low Reverse Leakage MAXIMUM RATINGS Rating Reverse Voltage MBD110DWT1 MBD330DWT1 MBD770DWT1 Symbol VR Value 7.0 30 70 120
  –55 to +125
  –55 to +150 Unit Vdc Forward Power Dissipation TA = 25°C Junction Temperature Storage Temperature Range PF TJ Tstg mW °.

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