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LBSS4240LT1G |
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| Part Number | LBSS4240LT1G |
| Manufacturer | LRC |
| Description | NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: LBSS5240LT1G . ORDERING INFORMATION Device LBSS4240LT1G S-LBSS4240LT1G Marking ZE LBSS4240LT3G ZE S-LBSS4240LT3G Shipping 3000/Tape & Reel 10000/Tape & Reel LBSS4240LT1G S-LBSS4240LT1G 3 1 2 SOT– 23 COLLECTOR 3 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Collector–Emitter Voltage C. |
| Features |
• Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standard packaged transistors. • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. APPLICATIONS • Supply line switching circuits • Battery management applications • DC/DC converter applications • Strobe flash units • Heavy duty battery powered equipment (motor and lamp dr. |
| Datasheet |
 LBSS4240LT1G Data Sheet
PDF 220.64KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | LBSS123LT1G |
Leshan Radio Company |
N-CHANNEL POWER MOSFET |
|
| 2 | LBSS123LT3G |
Leshan Radio Company |
N-CHANNEL POWER MOSFET |
|
| 3 | LBSS138DW1T1G |
LRC |
Power MOSFET |
|
| 4 | LBSS138LT1G |
Leshan Radio Company |
Power MOSFET |
|
| 5 | LBSS138LT3G |
Leshan Radio Company |
Power MOSFET |
|
| 6 | LBSS138V3.3T1G |
LRC |
Dual Integrated Circuit N-Channel/PN Duals |
|
| 7 | LBSS138WT1G |
Leshan Radio Company |
Power MOSFET |
|
| 8 | LBSS138WT3G |
Leshan Radio Company |
Power MOSFET |
|
| 9 | LBSS139LT1G |
LRC |
Power MOSFET |
|
| 10 | LBSS8402DW1T1G |
LRC |
Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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