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LBAS16BST5G |
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| Part Number | LBAS16BST5G |
| Manufacturer | LRC |
| Description | LESHAN RADIO COMPANY, LTD. Switching Diode FEATURE ƽSmall plastic SMD package. ƽContinuous reverse voltage: max. 75 V. ƽHigh-speed switching in hybrid thick and thin-film circuits. ƽ We declare that the material of product compliance with RoHS requirements. DEVICE MARKING AND ORDERING INFORMATION Device LBAS16BST1G Marking 3* Shipping 5000/Tape&Reel LB. |
| Features | V R = 75 Vdc, T J = 150°C) (V R = 25 Vdc, T J = 150°C) Reverse Breakdown Voltage (I BR = 100 µAdc) IR V (BR) Forward Voltage VF (I F = 1.0 mAdc) (I F = 10 mAdc) (I F = 50 mAdc) (I F = 150 mAdc) Diode Capacitance CD (V R = 0, f = 1.0 MHz) Forward Recovery Voltage (I F = 10 mAdc, t r = 20 ns) Reverse Recovery Time (I F = I R = 10 mAdc, R L = 50 Ω) Stored Charge (I F = 10 mAdc to V R = 5.0 Vdc, R L = 500 Ω) V FR t rr QS LBAS16BST5G 1 2 SOD882 1 Cathode 2 Anode Unit Vdc mAdc mAdc Unit mW mW/°C °C/W °C Min — — — 75 — — — — — — — — Max Unit µAdc 1.0 50 30 — Vdc mV 715 855 1. |
| Datasheet |
 LBAS16BST5G Data Sheet
PDF 153.47KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | LBAS16HT1 |
Leshan Radio Company |
Switching Diode |
|
| 2 | LBAS16LT1 |
Leshan Radio Company |
Switching Diode |
|
| 3 | LBAS16LT1G |
LRC |
Switching Diode |
|
| 4 | LBAS16LT3G |
LRC |
Switching Diode |
|
| 5 | LBAS16TT1G |
Leshan Radio Company |
Silicon Switching Diode |
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| 6 | LBAS16TT3G |
Leshan Radio Company |
Silicon Switching Diode |
|
| 7 | LBAS16TW1T1G |
Leshan Radio Company |
SURFACE MOUNT FAST SWITCHING DIODE |
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| 8 | LBAS16WT1 |
Leshan Radio Company |
Switching Diode |
|
| 9 | LBAS16WT1G |
Leshan Radio Company |
Switching Diode |
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| 10 | LBAS116LT1G |
Leshan Radio Company |
Surface Mount Low Leakge Diode |
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Desde 2024. D4U Semiconductor.
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