Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | KTC4075 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | KTC4075 |
| Manufacturer | HOTTECH |
| Title | NPN TRANSISTOR |
| Description | Plastic-Encapsulate Transistors FEATURES • Excellent hFE linearity • High hFE • Low Noise • Complementary to KTA2014 KTC4075 (NPN) Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junct. |
| Features |
• Excellent hFE linearity • High hFE • Low Noise • Complementary to KTA2014 KTC4075 (NPN) Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Temperature unless otherwise noted) Symbol Value VCBO 60 VCEO 50 VEBO 5 IC 0.15 PC 0.1 TJ 150 Tstg -55to . |
| Part Number | KTC4075 |
| Manufacturer | KEC |
| Title | EPITAXIAL PLANAR NPN TRANSISTOR |
| Description | SEMICONDUCTOR TECHNICAL DATA KTC4075 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEAUTRES Excellent hFE Linearity : hFE(0.1mA)/hFE(2mA)=0.95(Typ.). High hFE : hFE=70 700. Low Noise : NF=1dB(Typ.), 10dB(Max.). Complementary to KTA2014. Small Package. MAXIMUM. |
| Features | ON Collector Cut-off Current ICBO VCB=60V, IE=0 Emitter Cut-off Current IEBO VEB=5V, IC=0 DC Current Gain hFE (Note) VCE=6V, IC=2mA Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA Transition Frequency fT VCE=10V, IC=1mA Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz Noise Figure VCE=6V, IC=0.1mA, NF f=1kHz, Rg=10k Note : hFE Classification O(2):70 140, Y(4. |
| Part Number | KTC4075 |
| Manufacturer | Jiangsu Changjiang Electronics |
| Title | TRANSISTOR |
| Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT¡ª 23 KTC4075 FEATURES TRANSISTOR£¨ NPN £© 1. BASE 2. EMITTER 3. COLLECTOR Power dissipation PCM : 0.1 W£¨ Tamb=25¡æ£© Collector current ICM: 0.15 A Collector-base voltage V(BR)CBO : 60 V Operating and . |
| Features | TRANSISTOR£¨ NPN £© 1. BASE 2. EMITTER 3. COLLECTOR Power dissipation PCM : 0.1 W£¨ Tamb=25¡æ£© Collector current ICM: 0.15 A Collector-base voltage V(BR)CBO : 60 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ Unit : mm ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown v. |
| Part Number | KTC4075 |
| Manufacturer | Galaxy Semi-Conductor |
| Title | NPN Silicon Epitaxial Planar Transistor |
| Description | BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor FEATURES z z z High and excellent DC current gain. Complementary to KTA2014. Small package. Production specification KTC4075 Pb Lead-free APPLICATIONS z z General purpose application. Switching application. SOT-23 ORDERING INFORMATION. |
| Features | z z z High and excellent DC current gain. Complementary to KTA2014. Small package. Production specification KTC4075 Pb Lead-free APPLICATIONS z z General purpose application. Switching application. SOT-23 ORDERING INFORMATION Type No. KTC4075 Marking LO/LY/LGR/LBL Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC IB B Parameter Collector-Base V. |
| Part Number | KTC4075 |
| Manufacturer | Jin Yu Semiconductor |
| Title | TRANSISTOR |
| Description | KTC4075 TRANSISTOR (NPN) FEATURES z z z z SOT-23 1. BASE 2. EMITTER Excellent hFE linearity High hFE Low Noise Complementary to KTA2014 3. COLLECTOR MAXIMUM RATINGS(TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base V. |
| Features | z z z z SOT-23 1. BASE 2. EMITTER Excellent hFE linearity High hFE Low Noise Complementary to KTA2014 3. COLLECTOR MAXIMUM RATINGS(TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Parameter Value 60 50 5 150 . |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | KTC4072E |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR |
|
| 2 | KTC4072V |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR |
|
| 3 | KTC4074V |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR |
|
| 4 | KTC4075-BL |
MCC |
NPN Plastic-Encapsulate Transistors |
|
| 5 | KTC4075-GR |
MCC |
NPN Plastic-Encapsulate Transistors |
|
| 6 | KTC4075-O |
MCC |
NPN Plastic-Encapsulate Transistors |
|
| 7 | KTC4075-Y |
MCC |
NPN Plastic-Encapsulate Transistors |
|
| 8 | KTC4075E |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR |
|
| 9 | KTC4075F |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR |
|
| 10 | KTC4075V |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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