Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
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KTB1368 |
| Part Number | KTB1368 |
| Manufacturer | BLUE ROCKET ELECTRONICS |
| Title | Silicon PNP transistor |
| Description | TO-220F PNP 。Silicon PNP transistor in a TO-220F Plastic Package. / Features hFE , KTD2060 。 Good Linearity of hFE, complementary pair with KTD2060. / Applications 。 General Purpose Application. / Equivalent Circuit / Pinning 1 23 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE C. |
| Features | hFE , KTD2060 。 Good Linearity of hFE, complementary pair with KTD2060. / Applications 。 General Purpose Application. / Equivalent Circuit / Pinning 1 23 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range R 40~80 O 70~140 Y 120~240 http://www.fsbrec.com 1/6 KTB1368 Rev.F Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) . |
KTB1368 |
| Part Number | KTB1368 |
| Manufacturer | KEC |
| Title | TRIPLE DIFFUSED PNP TRANSISTOR |
| Description | SEMICONDUCTOR TECHNICAL DATA KTB1368 TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES Good Linearity of hFE. Complementary to KTD2060. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Co. |
| Features | Good Linearity of hFE. Complementary to KTD2060. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING -80 -80 -5 -4 -0.4 25 150 -55 150 UNIT V V V A A W K A S E LL M DD NN J G. |
KTB1368 |
| Part Number | KTB1368 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Power Transistors |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Collector Power Dissipation- : PC= 25W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= -1.7V(Max)@ (IC= -3A, IB= -0.3A) ·Complement to Type KTD2060 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. |
| Features | (BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A VBE(on) Base-Emitter On Voltage IC= -3A; VCE= -5V ICBO Collector Cutoff Current VCB= -80V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -0.5A; VCE= -5V hFE-2 DC Current Gain IC= -3A; VCE= -5V COB Output Capacitance IE= 0; VCB. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | KTB1366 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 2 | KTB1366 |
JCET |
PNP Transistor |
|
| 3 | KTB1366 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 4 | KTB1366 |
KEC |
TRIPLE DIFFUSED PNP TRANSISTOR |
|
| 5 | KTB1367 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 6 | KTB1367 |
KEC |
TRIPLE DIFFUSED PNP TRANSISTOR |
|
| 7 | KTB1369 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 8 | KTB1369 |
KEC |
EPITAXIAL PLANAR PNP TRANSISTOR |
|
| 9 | KTB1370 |
KEC |
TRIPLE DIFFUSED PNP TRANSISTOR |
|
| 10 | KTB1124 |
GME |
PNP Silicon Epitaxial Planar Transistor |
|
Desde 2024. D4U Semiconductor.
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