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KSC5027 |
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| Part Number | KSC5027 |
| Manufacturer | SavantIC |
| Description | With TO-220C package ·High voltage and high reliability ·High speed switching ·Wide area of safe operation PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector curre. |
| Features | tion voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=5mA ;IB=0 IC=1mA; IE=0 IE=1mA;IC=0 IC=1.5A ;IB=0.3A IC=1.5A ;IB=0.3A VCB=800V ;IE=0 VEB=5V; IC=0 IC=0.2A ; VCE=5V IC=1A ; VCE=5V IC=0.2A ; VCE=10V f=1MHz ; VCB=10V 10 8 MIN 800 1100 7 www.datasheet4u.com KSC5027 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT Cob TYP. MAX UNIT V V V 2.0 1.5 10 10 40 V V µA µA 15 60 MHz pF Switching times ton ts tf Turn-on time Storage time Fall time IC=5 IB1=-2.5IB2=2A . |
| Datasheet |
 KSC5027 Data Sheet
PDF 155.47KB |
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KSC5027 |
| Part Number | KSC5027 |
| Manufacturer | Fairchild Semiconductor |
| Title | NPN Epitaxial Silicon Transistor |
| Description | KSC5027 KSC5027 High Voltage and High Reliability • High Speed Switching • Wide SOA 1 TO-220 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitte. |
| Features | . |
KSC5027 |
| Part Number | KSC5027 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Sustaining Voltage- :VCEO(SUS)= 800V(Min) ·High Speed Switching ·Low Collector Saturation Voltage ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator, DC-DC converter and u. |
| Features | ONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 5mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A ICBO Collector Cutoff Current VCB= 800V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.2A ; VCE= 5V hFE-2 DC Current Gain hFE-1 Classifications N R O 10-20. |
KSC5027 |
| Part Number | KSC5027 |
| Manufacturer | ON Semiconductor |
| Title | NPN Silicon Transistor |
| Description | TO−220−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semicondu. |
| Features | ce KSC5027OTU Package TO−220−3LD (Pb-Free, Halide Free) Shipping 1000 Units / Tube ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Symbol Parameter Conditions Min Typ Max Unit BVCBO BVCEO BVEBO VCEX(sus)1 Collector−Base Breakdown Voltage Collector−Emitter Breakdown Voltage Emitter−Base Breakdown Voltage Collector−Emitter Sustaining Voltage IC = 1 mA, IE = 0 1100 − − . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | KSC5020 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 2 | KSC5020 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 3 | KSC5020 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 4 | KSC5021 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 5 | KSC5021 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 6 | KSC5021 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | KSC5021F |
INCHANGE |
NPN Transistor |
|
| 8 | KSC5021F |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 9 | KSC5021F |
JCET |
NPN Transistor |
|
| 10 | KSC5022 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
Desde 2024. D4U Semiconductor.
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