K4S641632H-UCL70 TSOP-II Datasheet, Distribuidor, stock y mejor precio

Part Number	K4S641632H-UCL70
Manufacturer	Samsung semiconductor
Title	64Mb H-die SDRAM Specification 54 TSOP-II
Description	The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows prec.
Features	• JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system clock • Burst read single-bit write operation • DQM (x4,x8) & L(U)DQM (x16) for masking • .

No.	Parte #	Fabricante	Descripción
1	K4S641632H-UCL75	Samsung semiconductor	64Mb H-die SDRAM Specification 54 TSOP-II
2	K4S641632H-UCL75	Samsung semiconductor	64Mb H-die SDRAM Specification 54 TSOP-II
3	K4S641632H-UCL60	Samsung semiconductor	64Mb H-die SDRAM Specification 54 TSOP-II
4	K4S641632H-UCL60	Samsung semiconductor	64Mb H-die SDRAM Specification 54 TSOP-II
5	K4S641632H-UC60	Samsung semiconductor	64Mb H-die SDRAM Specification 54 TSOP-II
6	K4S641632H-UC60	Samsung semiconductor	64Mb H-die SDRAM Specification 54 TSOP-II
7	K4S641632H-UC70	Samsung semiconductor	64Mb H-die SDRAM Specification 54 TSOP-II
8	K4S641632H-UC70	Samsung semiconductor	64Mb H-die SDRAM Specification 54 TSOP-II
9	K4S641632H-UC75	Samsung semiconductor	64Mb H-die SDRAM Specification 54 TSOP-II
10	K4S641632H-UC75	Samsung semiconductor	64Mb H-die SDRAM Specification 54 TSOP-II

K4S641632H-UCL70 Datasheet. existencias, precio