K4067-TL-E |
Part Number | K4067-TL-E |
Manufacturer | VBsemi |
Description | K4067-TL-E-VB K4067-TL-E-VB Datasheet www.VBsemi.com N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.007 at VGS = 10 V 0.009 at VGS = 4.5 V ID (A)a, e 70 60 Qg (Typ) 25 nC D TO-252 FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC G GD. |
Features |
• TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC G GDS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Avalanche Current Pulse Single Pulse Avalanche Energy IAS L = 0.1 mH EAS Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS TC = 25 °C Maximum Power Dissipat. |
Datasheet |
K4067-TL-E Data Sheet
PDF 223.25KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | K4069 |
Renesas |
N-CHANNEL POWER MOSFET | |
2 | K4003 |
Toshiba Semiconductor |
2SK4003 | |
3 | K4004-01MR |
Fuji |
Power MOSFET | |
4 | K4005-01MR |
Fuji Electric |
Power MOSFET | |
5 | K401 |
KODENSHI KOREA CORP |
Photocoupler | |
6 | K4012 |
Toshiba Semiconductor |
2SK4012 | |
7 | K4013 |
Toshiba Semiconductor |
2SK4013 | |
8 | K4017 |
Toshiba Semiconductor |
Silicon N-Channel MOS Type FET | |
9 | K402 |
KODENSHI KOREA CORP |
Photocoupler | |
10 | K4021 |
Toshiba Semiconductor |
2SK4021 |