Distributor | Stock | Price | Buy |
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K3568 |
Part Number | K3568 |
Manufacturer | Toshiba Semiconductor |
Title | 2SK3568 |
Description | 2SK3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3568 Switching Regulator Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 0.4 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.5 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 500 V) • En. |
Features | under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconducto. |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | K3561 |
Toshiba Semiconductor |
2SK3561 | |
2 | K3562 |
Toshiba Semiconductor |
2SK3562 | |
3 | K3562M |
EPCOS |
IF Filter | |
4 | K3563 |
Toshiba Semiconductor |
2SK3563 | |
5 | K3564 |
Toshiba Semiconductor |
2SK3564 | |
6 | K3565 |
Toshiba Semiconductor |
2SK3565 | |
7 | K3566 |
Toshiba |
Silicon N-Channel MOSFET | |
8 | K3567 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
9 | K3569 |
Toshiba Semiconductor |
2SK3569 | |
10 | K350 |
Hitachi |
Silicon N-Channel MOSFET |