K3265 |
Part Number | K3265 |
Manufacturer | VBsemi |
Description | K3265-VB www.VBsemi.com K3265-VB Datasheet N-Channel 700V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 700 VGS = 10 V 3 3 15 Single 0.75 FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • U. |
Features |
• Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction power supplies (PFC) • Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting • Industrial TO-220 FULLPAK D GDS Top View G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = . |
Datasheet |
K3265 Data Sheet
PDF 374.40KB |
Distributor | Stock | Price | Buy |
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K3265 |
Part Number | K3265 |
Manufacturer | Toshiba |
Title | 2SK3265 |
Description | 2SK3265 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIV) 2SK3265 Chopper Regulators DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.72 Ω (typ.) : |Yfs| = 7.0 . |
Features | nder heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor . |
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