Part Number | K2799 |
Manufacturer | Shindengen Electric |
Title | 2SK2799 |
Description | SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type 2SK2799 (F10F35VX2) 350V 10A OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) FEA... |
Features |
Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast.
APPLICATION
Switching power supply of AC 100V input High voltage power supply Inverter
RATINGS
VX-2 Series Power MOSFET
2SK2799 ( F10F35VX2 )
●Electrical... |
Datasheet | K2799 pdf datasheet - 357.01KB |
Part Number | K2796 |
Manufacturer | Hitachi Semiconductor |
Title | 2SK2796 |
Description | 2SK2796(L), 2SK2796(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.12Ω typ. • 4V gate drive dev. |
Features |
• Low on-resistance RDS(on) = 0.12Ω typ. • 4V gate drive devices. • High speed switching Outline DPAK |1 D G S ADE-208-534C (Z) 4th. Edition Jun 1998 44 12 3 12 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2796(L), 2SK2796(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source volt. |
Datasheet | K2796 pdf datasheet |
Part Number | K2792 |
Manufacturer | ROHM |
Title | 2SK2792 |
Description | Transistors Switching (600V, 4A) 2SK2792 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-sour. |
Features |
1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran-
teed to be ±30V. 5) Easily designed drive circuits. 6) Easy to parallel.
FExternal dimensions (Units: mm)
FStructure Silicon N-channel MOSFET
FAbsolute maximum ratings (Ta = 25_. |
Datasheet | K2792 pdf datasheet |
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