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K2415-Z |
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| Part Number | K2415-Z |
| Manufacturer | VBsemi |
| Description | K2415-Z-VB K2415-Z-VB Datasheet N-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 60 RDS(on) () Max. 0.073 at VGS = 10 V 0.085 at VGS= 4.5 V TO-252 ID (A) 18 15 Qg (Typ.) 19.8 G D S Drain Connected to Tab FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please. |
| Features |
• TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see APPLICATIONS • DC/DC Converters • DC/AC Inverters • Motor Drives D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (t = 300 µs) Avalanche Current Single Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range TC = 25 °C TC = 70 °C L = 0.1 mH TC = 25 °C TA = 25 °Cc VDS 60 V VGS . |
| Datasheet |
 K2415-Z Data Sheet
PDF 261.94KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | K2415 |
NEC |
2SK2415 |
|
| 2 | K241 |
Toshiba |
2SK241 |
|
| 3 | K2411 |
Forward Holdings |
Telephone Tone Ringer |
|
| 4 | K2411 |
NEC |
2SK2411 |
|
| 5 | K2414 |
NEC |
2SK2414 |
|
| 6 | K2417 |
Toshiba Semiconductor |
2SK2417 |
|
| 7 | K240 |
Aeroflex |
Silicon Zener Diodes |
|
| 8 | K240 |
Knox Inc |
LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE |
|
| 9 | K2400EH70 |
Littelfuse |
High Energy Bidirectional SIDACs |
|
| 10 | K2400G |
JIEJIE |
Sidac |
|
Desde 2024. D4U Semiconductor.
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