JANSR2N7616UB |
Part Number | JANSR2N7616UB |
Manufacturer | International Rectifier |
Description | IR HiRel R7 Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single . |
Features |
5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Hermetically Sealed Ceramic Package Surface Mount Light Weight Complementary P-Channel Available- IRHLUB7970Z4, IRHLUBN7970Z4 IRHLUBC7970Z4, IRHLUBCN7970Z4 ESD Rating: Class 0 per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = 4.5V, TC = 25°C Continuous Drain Current ID2 @ VGS = 4.5V, TC = 100°C IDM @TC = 25°C Continuous Drain Current Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation Linear Dera. |
Datasheet |
JANSR2N7616UB Data Sheet
PDF 1.36MB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | JANSR2N7624U3 |
International Rectifier |
P-CHANNEL POWER MOSFET | |
2 | JANSR2N7624U3CE |
International Rectifier |
Radiation Hardened Logic level Power MOSFET | |
3 | JANSR2N7626UB |
International Rectifier |
P-CHANNEL POWER MOSFET | |
4 | JANSR2N7647U3CE |
International Rectifier |
Radiation Hardened Power MOSFET | |
5 | JANSR2N7648U3C |
International Rectifier |
N-CHANNEL POWER MOSFET | |
6 | JANSR2N7666T1 |
International Rectifier |
Radiation Hardened Power MOSFET | |
7 | JANSR2N7261 |
International Rectifier |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR | |
8 | JANSR2N7262 |
International Rectifier |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR | |
9 | JANSR2N7268U |
International Rectifier |
Radiation Hardened Power MOSFET | |
10 | JANSR2N7269U |
International Rectifier |
Radiation Hardened Power MOSFET |