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J387S |
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| Part Number | J387S |
| Manufacturer | VBsemi |
| Description | J387S-VB J387S-VB Datasheet P-Channel 20-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 0.016 at VGS = - 4.5 V 0.025 at VGS = - 2.5 V ID (A)d - 40 - 35 Qg (Typ.) 13 nC TO-252 S G FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested APPLICATIONS • Load Switch • Battery . |
| Features |
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested APPLICATIONS • Load Switch • Battery Switch GD S D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Current TA = 70 °C IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD Operating Junction and Storage Temperature Range . |
| Datasheet |
 J387S Data Sheet
PDF 265.11KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | J380 |
Toshiba Semiconductor |
2SJ380 |
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| 2 | J300 |
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| 3 | J300 |
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| 4 | J300 |
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| 5 | J3006G21D |
PULSE |
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| 6 | J3011G21D |
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| 7 | J3018G21K |
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| 8 | J3026G01D |
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| 9 | J3026G21D |
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| 10 | J3026G21DNL |
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Desde 2024. D4U Semiconductor.
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